N Channel Enhancement Mode MOSFET Slkor NTR4003N with Low Input Capacitance and Fast Switching Speed

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Product Description

Product Overview

N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. This voltage-controlled small signal switch offers low input capacitance, fast switching speed, and low input/output leakage. It is suitable for battery-operated systems, solid-state relays, and direct logic-level interface with TTL/CMOS.

Product Attributes

Brand: SLKORMicro
Model: NTR4003N

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-source Voltage	VDS				30	V
Gate-source Voltage	VGS				20	V
Drain Current	ID	@ TA=25			560	mA
Pulsed Drain Current	IDM				1.7	A
Total Power Dissipation	PD	@ TA=25			690	mW
Thermal Resistance Junction-to-Ambient	RJA	@ Steady State		357		/ W
Junction and Storage Temperature Range	TJ ,TSTG		-55		+150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=250A	30			V
Zero Gate Voltage Drain Current	IDSS	VDS=30V,VGS=0V			1	A
Gate-Body Leakage Current	IGSS1	VGS= 20V, VDS=0V			1	A
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=250A	0.8	1.6		V
Static Drain-Source On-Resistance	RDS(ON)	VGS= 4.5V, ID=10mA			1.5
Static Drain-Source On-Resistance	RDS(ON)	VGS= 3.7V, ID=10mA			2.5
Diode Forward Voltage	VSD	IS=300mA,VGS=0V		1.2		V
Maximum Body-Diode Continuous Current	IS				100	mA
Input Capacitance	Ciss	VDS=25V,VGS=0V,f=1MHZ		17.5		pF
Output Capacitance	Coss	VDS=25V,VGS=0V,f=1MHZ		11.5		pF
Reverse Transfer Capacitance	Crss	VDS=25V,VGS=0V,f=1MHZ		6.5		pF
Total Gate Charge	Qg	VGS=10V,VDS=25V,ID=0.3A		1.7	2.4	nC
Turn-on Delay Time	tD(on)	VGS=10V,VDD=25V, ID=100mA, RGEN=6		5		ns
Turn-off Delay Time	tD(off)	VGS=10V,VDD=25V, ID=100mA, RGEN=6		17		ns
Reverse recovery Time	trr	VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s		30		ns