High Current Handling NPN Silicon Transistor Slkor BCP68-25 Designed for Switching and Amplification

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Product Description

Product Overview

The BCP68 is an NPN silicon transistor designed for general-purpose switching and amplification applications, particularly those requiring high current conditions. It offers a high current capability of up to 1 A and a low voltage rating of up to 20 V. This transistor is suitable for scenarios demanding robust performance under elevated current loads.

Product Attributes

Type: NPN Silicon Transistor
Model: BCP68
Package: SOT-223
Pinout: 1. BASE, 2. COLLECTOR, 3. EMITTER

Technical Specifications

Parameter	Symbol	Conditions	Rating	Unit
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage (Open Emitter)	VCBO		32	V
Collector-Emitter Voltage (Open Base)	VCEO		20	V
Emitter-Base Voltage (Open Collector)	VEBO		5	V
DC Collector Current	IC		1	A
Peak Collector Current	ICM		2	A
Peak Base Current	IBM		200	mA
Total Power Dissipation (Ta 25)	PD		1.35	W
Junction Temperature	TJ		150
Operating Temperature	TOPR		-45 ~ +150
Storage Temperature	TSTG		-65 ~ +150
THERMAL DATA
Thermal Resistance From Junction To Ambient	JA		91	/W
ELECTRICAL CHARACTERISTICS (TJ = 25, unless otherwise specified.)
Collector-Emitter Saturation Voltage	VCE(SAT)	IC = 1A, IB =100mA	500	mV
		IC = 5mA, VCE = 10V	620	mV
Base-Emitter Voltage	VBE	IC = 1A, VCE = 1V	1	V
Collector Cut-off Current	ICBO	IE = 0, VCB = 25V	100	nA
		IE = 0, VCB = 25V, TJ = 150	10	A
Emitter Cut-off Current	IEBO	IC = 0, VEB = 5V	100	nA
DC Current Gain	hFE	IC = 5mA, VCE = 10V	50
		IC = 500mA, VCE = 1V	85	300
		IC = 1A, VCE = 1V	60
Collector Capacitance	CC	IE = ie = 0, VCB = 5V, f = 1MHz	48	pF
Transition Frequency	fT	IC = -10mA, VCE = -5V, f = 100MHz	40	MHz
DC Current Gain Ratio of the Complementary Pairs	hFE1 / hFE2	\|IC\| = 0.5A, \|VCE\| = 1V	1.6