power MOSFET Slkor SL15N60CF optimized for conduction loss and avalanche robustness in power electronics

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This Power MOSFET utilizes Slkor's Advanced Super-Junction technology, designed to optimize conduction loss, enhance switching performance, and ensure robustness in avalanche and commutation modes. It is ideal for high-efficiency AC/DC power conversion in switching mode operations.

Product Attributes

Brand: Slkor
Technology: Advanced Super-Junction
Certifications: Pb-free and RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	TC = 25C unless otherwise noted			650	V
Drain Current - Continuous	ID	(TC = 25)			15	A
Drain Current - Continuous	ID	(TC = 100)			8	A
Drain Current - Pulsed	IDM	(Note 1)			45	A
Gate-Source Voltage	VGSS				30	V
Single Pulsed Avalanche Energy	EAS	(Note 2)			710	mJ
Avalanche Current	IAR	(Note 1)			3.0	A
Repetitive Avalanche Energy	EAR				1.11	mJ
Peak Diode Recovery dv/dt	dv/dt	(Note 3)			20	V/ns
MOSFET dv/dt	dv/dt				100
Power Dissipation	PD	(TC = 25)			30	W
Power Dissipation Derate		above 25			0.24	W/
Operating and Storage Temperature Range	TJ, TSTG		-55		+150
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	TL				300
Thermal Characteristics
Thermal Resistance, Junction-to-Case	RJC			4.1		/W
Thermal Resistance, Case-to-Sink	RJS	Typ.		--		/W
Thermal Resistance, Junction-to-Ambient	RJA			62.5		/W
Off Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS = 0 V, ID = 250mA	650			V
Drain-Source Breakdown Voltage	BVDSS	VGS = 0 V, ID = 0.25uA,TJ = 150	650			V
Zero Gate Voltage Drain Current	IDSS	VDS = 600 V, VGS = 0 V			1	uA
Zero Gate Voltage Drain Current	IDSS	VDS = 480 V, TC = 125			2	uA
Gate-Body Leakage Current, Forward	IGSSF	VGS = 30 V, VDS = 0 V			100	nA
Gate-Body Leakage Current, Reverse	IGSSR	VGS = -30 V, VDS = 0 V			-100	nA
On Characteristics
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250uA	2.5		4.5	V
Static Drain-Source On-Resistance	RDS(on)	VGS = 10 V, ID = 7.5 A		238	280	m
Gate resistance	Rg	F=1MHZ		1.1
Dynamic Characteristics
Input Capacitance	Ciss	VDS = 400 V, VGS = 0V, f = 1MHz		780		pF
Output Capacitance	Coss			23		pF
Time Related Output Capacitance	Co(tr)	VDS = 0V to 400 V, VGS = 0 V		300		pF
Energy Related Output Capacitance	Co(er)			37		pF
Switching Characteristics
Turn-On Delay Time	td(on)	VDS = 400 V, ID = 5.3A VGS = 10 V, RG = 10 See Figure 13		7.6		ns
Turn-On Rise Time	tr			6.7		ns
Turn-Off Delay Time	td(off)			38.2		ns
Turn-Off Fall Time	tf			8.4		ns
Total Gate Charge	Qg	VDS =400 V, ID = 5.3A, VGS = 10 V		19.6		nC
Gate-Source Charge	Qgs			3.7		nC
Gate-Drain Charge	Qgd			9.7		nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current	IS				15	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM				45	A
Drain-Source Diode Forward Voltage	VSD	VGS = 0 V, IS = 5.3A			1.2	V
Reverse Recovery Time	trr	VDD = 400 V, IS = 5.3A, dIF / dt = 100 A/s		234		ns
Reverse Recovery Charge	Qrr			2.2		uC