N Channel Power MOSFET Slkor SL3N06 suitable for various electronic switching and amplification uses

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Product Description

Product Overview

The SL3N06 is an N-Channel Power MOSFET designed for various electronic applications. It offers reliable performance with key electrical and thermal characteristics suitable for power switching and amplification tasks.

Product Attributes

Brand: SL KORMICRO
Model: SL3N06
Type: N-Channel Power MOSFET
Package: SOT-23

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown Voltage	BVDSS	60			V	ID =250uA,VGS=0V
Gate Threshold Voltage	VGS(th)	1		3	V	ID =250uA,VGS= VDS
Diode Forward Voltage Drop	VSD			1.5	V	ISD=1A,VGS=0V
Zero Gate Voltage Drain Current	IDSS			1	uA	VGS=0V, VDS= 60V
Gate Body Leakage	IGSS			+100	nA	VGS=+20V, VDS=0V
Static Drain-Source On-State Resistance	RDS(ON)			90	m	ID=3A,VGS=10V
Static Drain-Source On-State Resistance	RDS(ON)			120	m	ID=2A,VGS=4.5V
Input Capacitance	CISS			550	pF	VGS=0V, VDS=25V,f=1MHz
Common Source Output Capacitance	COSS			125	pF	VGS=0V, VDS=25V,f=1MHz
Turn-ON Time	t(on)			40	ns	VDS=30V, ID=200mA, RGEN=25
Turn-OFF Time	t(off)			80	ns	VDS=30V, ID=200mA, RGEN=25

Characteristic	Symbol	Max	Unit	Conditions
Drain-Source Voltage	BVDSS	60	V
Gate- Source Voltage	VGS	+20	V
Drain Current-continuous	IDR	3	A
Drain Current-pulsed	IDRM	10	A
Total Device Dissipation	PD	1380	mW	TA=25
Derate above 25		3.8	mW/
Thermal Resistance Junction to Ambient	RJA	90	/W
Junction and Storage Temperature	TJ,Tstg	150,-55to+150