Power Management Device Slkor SL30N02D N Channel MOSFET Featuring Low Gate Charge and 30 Volt Rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This N-channel enhancement mode power MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It is RoHS compliant and designed for efficient power management applications.
Product Attributes
- Brand: SLKORMicro (implied by URL)
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| General Description | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous (TC=25) | ID | 150 | A | |||
| Drain Current-Continuous (TC=100) | ID | 80 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 400 | A | ||
| Avalanche Energy | EAS | Note4 | 121 | mJ | ||
| Maximum Power Dissipation (TC=25) | PD | 70 | W | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Thermal Resistance, Junction-to-Case | RJC | - | - | 2.14 | /W | |
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | - | 1.0 | uA |
| Gate-Body Leakage | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,IDS=250uA | 1.0 | 1.5 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=30A | - | 2.8 | 4.0 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 4.4 | 6.0 | m |
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CiSS | VDS =15V, VGS = 0V, f=1MHz | - | 2820 | - | pF |
| Output Capacitance | COSS | - | 393 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 330 | - | pF | |
| Gate Resistance | Rg | VDD=0V,VGS=1V, F=1MHz | - | 3.8 | - | |
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | Td(on) | VGS=10V,VDs=15V, RGEN=3 ID=30A | - | 23 | - | ns |
| Rise Time | tr | - | 28 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 74 | - | ns | |
| Fall Time | tf | - | 36 | - | ns | |
| Total Gate Charge | Qg | VDS=15V,IDS=30A, VGS=10V | - | 30 | - | nC |
| Gate to Source Gate Charge | Qgs | - | 7.2 | - | nC | |
| Gate to DrainMillerCharge | Qg d | - | 10.4 | - | nC | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IDS=30A | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25,IF=30A di/dt=100A/us | - | 28 | - | nS |
| Reverse Recovery Charge | Qrr | - | 21 | - | nC | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina