Compact SOT523 package NPN transistor Slkor MMBT3904T designed for general purpose and complementary

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Product Description

Product Overview

The MMBT3904T is an NPN transistor designed for general-purpose applications. It features a small package (SOT-523) and is complementary to the MMBT3906T. This transistor offers reliable performance with key electrical characteristics such as breakdown voltages, cutoff currents, DC current gain (hFE), and saturation voltages.

Product Attributes

Brand: SLKOR (implied by website URL)
Model: MMBT3904T
Package Type: SOT-523
Transistor Type: NPN
Complementary to: MMBT3906T

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage	VCBO				60	V
Collector - Emitter Voltage	VCEO				40	V
Emitter - Base Voltage	VEBO				6	V
Collector Current - Continuous	IC				200	mA
Collector Power Dissipation	PC				150	mW
Thermal Resistance, Junction to Ambient	RJA				833	C/W
Junction Temperature	TJ				150	C
Storage Temperature Range	Tstg		-55		150	C
Electrical Characteristics (Ta = 25)
Collector- base breakdown voltage	VCBO	Ic= 100 A IE= 0	60			V
Collector- emitter breakdown voltage	VCEO	Ic= 1 mA IB= 0	40			V
Emitter - base breakdown voltage	VEBO	IE= 100A IC= 0	6			V
Collector-base cut-off current	ICBO	VCB= 60 V , IE= 0			100	nA
Collector cut-off current	ICEX	VCE= 30 V , VEB(off)=3V			50	nA
Emitter cut-off current	IEBO	VEB= 5V , IC=0			100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=10 mA, IB=1mA		0.2		V
Collector-emitter saturation voltage	VCE(sat)	IC= 50 mA, IB= 5mA		0.3		V
Base - emitter saturation voltage	VBE(sat)	IC=10 mA, IB=1mA		0.65	0.85	V
Base - emitter saturation voltage	VBE(sat)	IC= 50 mA, IB= 5mA		0.95		V
DC current gain	hFE	VCE= 10V, IC= 0.1mA	40
		VCE= 10V, IC= 1mA	70
		VCE= 10V, IC= 10mA	100	300
		VCE= 10V, IC= 50mA
Delay time	td	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA		35		nS
Rise time	tr	VCC=3V, IC=10mA, IB1=1mA		35		nS
Storage time	ts	VCC=3V, IC=10mA, IB1=IB2=1mA		200		nS
Fall time	tf	VCC=3V, IC=10mA, IB1=IB2=1mA		50		nS
Collector output capacitance	Cob	VCB= 5V, IE= 0,f=1MHz		4		pF
Base input capacitance	Cib	VEB=0.5V, IC=0, f=1MHz		8		pF
Transition frequency	fT	VCE= 20V, IC= 10mA,f=100MHz	300			MHz
Dimensions (mm are the original dimensions)
Dimension	A	A1	B	c	D	E
Value	1.8	0.30	1.4	0.15	0.9	0.7
Dimension	e	e1	Lp	Q	v	w
Value	1.75	0.45	0.2	0.23	0.10	0.13