Switching P Channel MOSFET SLkor SL60P03D with Low On Resistance and High Avalanche Energy Capacity
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SL60P03D is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. This MOSFET is ideal for battery and loading switching applications and comes in an excellent package for good heat dissipation.
Product Attributes
- Brand: SLKORMicro
- Model: SL60P03D
- Package: TO-252
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit | |
| Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Drain-Source Breakdown Voltage | VGS=0VID=-250A | -30 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=-30VVGS=0V | -- | -- | -1.0 | uA | |
| Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA | |
| Gate Threshold Voltage | VDS=VGSID=-250A | -1.0 | -1.5 | -2.2 | V | |
| Drain-Source On-State Resistance | VGS=-10V ID=-15A | -- | 8.5 | 10 | m | |
| Drain-Source On-State Resistance | VGS=-4.5VID=-8A | -- | 9.5 | 13 | m | |
| Input Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 1988 | -- | pF | |
| Output Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 305 | -- | pF | |
| Reverse Transfer Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 266 | -- | pF | |
| Switching Characteristics @ TJ = 25C (unless otherwise stated) | Total Gate Charge | VDD=-15VID=-12A VGS=-10V | -- | 35 | -- | nC |
| Gate Source Charge | VDD=-15VID=-12A VGS=-10V | -- | 5.8 | -- | nC | |
| Gate Drain Charge | VDD=-15VID=-12A VGS=-10V | -- | 8.8 | -- | nC | |
| Turn-on Delay Time | VDD=-15VID=-12A VGS=-10VRG=2.5 | -- | 11 | -- | nS | |
| Turn-on Rise Time | VDD=-15VID=-12A VGS=-10VRG=2.5 | -- | 7.7 | -- | nS | |
| Turn-Off Delay Time | VDD=-15VID=-12A VGS=-10VRG=2.5 | -- | 43.3 | -- | nS | |
| Turn-Off Fall Time | VDD=-15VID=-12A VGS=-10VRG=2.5 | -- | 18 | -- | nS | |
| Source- Drain Diode Characteristics | Forward on voltage | Tj=25Is=-12A | -- | -- | -1.2 | V |
| ID=-1A VGS=-10V | -- | -- | -1.2 | V | ||
| Absolute Maximum Ratings | Drain-Source Breakdown Voltage | -- | -30 | -- | -- | V |
| Gate-Source Voltage | -- | -- | 20 | -- | V | |
| Single pulse avalanche energy | -- | -- | 77 | -- | mJ | |
| Storage Temperature Range | -- | -55 | -- | 175 | C | |
| Diode Continuous Forward Current | Tc=25C | -- | -60 | -- | A | |
| Pulse Drain Current | Tc=25C | -- | -210 | -- | A | |
| Tested Continuous Drain Current@GS=10V | Tc=25C | -- | -60 | -- | A | |
| Common Ratings (TC=25C Unless Otherwise Noted) | Gate-Source Voltage | -- | -- | 20 | -- | V |
| Drain-Source On-State Resistance | VGS=-10V ID=-15A | -- | 8.5 | 10 | m | |
| Maximum Power Dissipation | TA=25 | -- | -- | 62.5 | W | |
| Thermal Resistance Junction-Ambient | (*1 in2 Pad of 2-oz Copper), Max. | -- | -- | 110 | C/W |
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