High gain NPN transistor Slkor 2SC1815 suitable for amplification and switching in electronic devices

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Product Description

Product Overview

The 2SC1815 is a general-purpose NPN bipolar junction transistor designed for a wide range of applications. It offers a high DC current gain (hFE) and is suitable for amplification and switching circuits. The transistor is available in different ranks (O, Y, GR, BL) to cater to specific gain requirements. Its robust performance and electrical characteristics make it a reliable component in various electronic designs.

Product Attributes

Brand: SLKORmicro
Model: 2SC1815
Type: NPN Bipolar Junction Transistor

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC = 100uA, IE = 0	60			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0.1mA, IB = 0	50			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 100uA, IC = 0	5			V
Collector Cut-off Current	ICBO	VCB = 60V, IE = 0			0.1	uA
Emitter Cut-off Current	IEBO	VEB = 5V, IC = 0			0.1	uA
DC Current Gain	hFE	VCE = 6V, IC = 2mA	70		700
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 100mA, IB = 10mA		0.25		V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 100mA, IB = 10mA		1		V
Transition Frequency	fT	VCE = 10V, IC = 1mA, f = 30MHz		80		MHz
Collector Output Capacitance	Cob	VCB = 10V, IE = 0, f = 1MHz			3.5	pF
Noise Figure	NF	VCE = 6V, IC = 0.1mA, f = 1KHz, RG = 10K			10	dB
Operation Junction and Storage Temperature Range	TJ, Tstg		-55		150	C
Collector Power Dissipation	PC	Ta = 25C			400	mW
Collector Current - Continuous	IC				0.15	A
Collector-Base Voltage	VCB				60	V
Collector-Emitter Voltage	VCE				50	V
Emitter-Base Voltage	VEB				5	V
hFE Rank O Range			70		140
hFE Rank Y Range			120		240
hFE Rank GR Range			200		400
hFE Rank BL Range			350		700