NPN Silicon Driver Transistor Slkor MMBTA05 Featuring 60V Collector Emitter Voltage and High Current

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Product Description

Product Overview

The MMBTA05 and MMBTA06 are NPN Silicon Driver Transistors designed for various applications. These transistors offer reliable performance with key electrical characteristics such as DC current gain, collector-emitter saturation voltage, and base-emitter on voltage. They are suitable for use in switching circuits and signal amplification, providing essential functionality for electronic designs.

Product Attributes

Brand: SLKORMicro
Type: NPN Silicon Driver Transistor
Package: SOT-23

Technical Specifications

Characteristic	Symbol	Model	Min	Max	Unit	Conditions
Collector-Emitter Voltage (Sustaining)	VCEO	MMBTA05	60		Vdc
Collector-Emitter Voltage (Sustaining)	VCEO	MMBTA06	60		Vdc
Collector Current (Continuous)	IC	MMBTA05/06		4.0	A
DC Current Gain	hFE	MMBTA05	100			IC = 10 mAdc, VCE = 1.0 Vdc
DC Current Gain	hFE	MMBTA06	100			IC = 10 mAdc, VCE = 1.0 Vdc
DC Current Gain	hFE	MMBTA05				IC = 100 mAdc, VCE = 1.0 Vdc
DC Current Gain	hFE	MMBTA06				IC = 100 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage	VCE (sat)	MMBTA05/06		0.25	Vdc	IC = 100 mAdc, IB = 10 mAdc
Base-Emitter On Voltage	VBE (on)	MMBTA05/06		1.2	Vdc	IC = 100 mAdc, VCE = 1.0 Vdc
Current-Gain-Bandwidth Product	fT	MMBTA05	100		MHz	IC = 10 mA, VCE = 2.0 V, f = 100 MHz
Current-Gain-Bandwidth Product	fT	MMBTA06			MHz	IC = 10 mA, VCE = 2.0 V, f = 100 MHz
Turn-on Time	tr	MMBTA05/06		3.0	ns
Turn-off Time	tf	MMBTA05/06		3.0	ns
Collector-Emitter Voltage	VCE	MMBTA05/06	60		V
Collector-Emitter Voltage	VCE	MMBTA05/06	80		V
Collector Current	IC	MMBTA05/06		4.0	A
Pulse Test: Pulse Width		MMBTA05/06	300	us		Duty Cycle 2.0%
Frequency	f	MMBTA05/06				Defined as frequency at which hfe extrapolates to unity
Package Type		MMBTA05/06		SOT-23
Temperature Coefficient (Base-Emitter)	R VB	MMBTA05/06	-0.8	-2.8	mV/C	VBE=1.0V, TJ=25C