China Switching high voltage inductive loads with TOSHIBA TD62783AFG O S EL 8 channel DMOS transistor array for sale

Switching high voltage inductive loads with TOSHIBA TD62783AFG O S EL 8 channel DMOS transistor array

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Product Description

Product Overview

The TBD62783A series is an 8-channel source-type DMOS transistor array designed for switching inductive loads. Each output includes a built-in clamp diode, making it suitable for applications requiring high voltage and current handling. Careful consideration of thermal conditions during use is recommended.

Product Attributes

Brand: TOSHIBA
Origin: Silicon Monolithic

Technical Specifications

Model	Package	VOUT (MAX)	IOUT (MAX per channel)	Input Voltage (Output ON) (MIN)	Input Voltage (Output OFF) (MAX)	Weight (Typ.)
TBD62783APG	P-DIP18-300-2.54-001	50 V	-500 mA	2.0 V	0.6 V	1.3 g
TBD62783AFG	SOP18-P-375-1.27	50 V	-500 mA	2.0 V	0.6 V	0.41 g
TBD62783AFNG	SSOP18-P-225-0.65	50 V	-500 mA	2.0 V	0.6 V	0.09 g
TBD62783AFWG	P-SOP18-0812-1.27-001	50 V	-500 mA	2.0 V	0.6 V	0.48 g

Characteristic	Symbol	Rating	Unit
Power supply voltage	VCC	-0.5 to 50	V
Input voltage	VIN	-0.5 to 30	V
Clamp diode reverse voltage	VR	50	V
Clamp diode forward current	IF	500	mA
Operating temperature	Topr	-40 to 85	C
Storage temperature	Tstg	-55 to 150	C

Characteristic	Symbol	Condition	Min	Typ.	Max	Unit
Output leakage current	Ileak	VCC = 50 V, VIN = 0 V			1.0	A
Output voltage (Output ON-resistance)	VDS (RON)	IOUT = -350 mA, VIN = 5.0 V, VCC = 5.0 V		0.56 (1.6)	1.14 (3.25)	V ()
Input current (Output on)	IIN (ON)	VIN = 2.0 V			0.1	mA
Input current (Output off)	IIN (OFF)	VIN = 0 V, Ta = 85C			1.0	A
Supply current (for each channel)	ICC	VIN = 2.0 V, VCC = 50 V, Output open			1.5	mA
Clamp diode reverse current	IR	VR = 50 V, Ta = 85C			1.0	A
Clamp diode forward voltage	VF	IF = 350 mA			2.0	V
Turnon delay	tON	VCC = 50 V, RL = 125 , CL = 15 pF		0.4		s
Turnoff delay	tOFF			2.0		s