N Channel Enhancement Mode Logic Level MOSFET Slkor BSS131 suitable for power management and switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The BSS131 is an N-Channel, Enhancement Mode, Logic Level MOSFET with dv/dt rating. Designed for general-purpose switching applications, it offers a low on-state resistance and is suitable for various electronic circuits requiring efficient power control.
Product Attributes
- Brand: slkormicro
- Model: BSS131
- Package: SOT-23
- Certifications: ESD class (JESD22-A114-HBM) 0 (
Technical Specifications
| Parameter | Symbol | Conditions | Unit | min. | typ. | max. |
| N-Channel, Enhancement mode, Logic level, dv /dt rated | ||||||
| Continuous drain current | ID | TA=25 C | A | 0.11 | ||
| TA=70 C | A | 0.09 | ||||
| Pulsed drain current | ID,pulse | TA=25 C | A | 0.4 | ||
| Reverse diode dv /dt | dv /dt | ID=0.1 A, VDS=192 V, di/dt =200 A/s, Tj,max=150 C | kV/s | 6 | ||
| Gate source voltage | VGS | V | 20 | |||
| Power dissipation | Ptot | TA=25 C | W | 0.36 | ||
| Operating and storage temperature | Tj, Tstg | C | -55 | 150 | ||
| Drain-source breakdown voltage | V (BR)DSS | VGS=0 V, ID=250 A | V | 240 | - | - |
| Gate threshold voltage | VGS(th) | VDS=0 V, ID=56 A | V | 0.8 | 1.4 | 1.8 |
| Drain-source leakage current | ID (off) | VDS=240 V, VGS=0 V, Tj=25 C | A | - | - | 0.01 |
| VDS=240 V, VGS=0 V, Tj=150 C | A | - | - | 5 | ||
| Gate-source leakage current | IGSS | VGS=20 V, VDS=0 V | nA | - | - | 10 |
| Drain-source on-state resistance | RDS(on) | VGS=4.5 V, ID=0.09 A | - | 9.07 | 20 | |
| VGS=10 V, ID=0.1 A | - | 7.7 | 14 | |||
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max, ID=0.08 A | S | 0.06 | 0.13 | - |
| Input capacitance | Ciss | VGS=0 V, VDS=25 V, f =1 MHz | pF | - | 58 | 77 |
| Output capacitance | Coss | VGS=0 V, VDS=25 V, f =1 MHz | pF | - | 7.3 | 10 |
| Reverse transfer capacitance | Crss | VGS=0 V, VDS=25 V, f =1 MHz | pF | - | 2.8 | 4.2 |
| Turn-on delay time | td(on) | VDD=120 V, VGS=10 V, ID=0.1 A, RG=6 | ns | - | 3.3 | 5.0 |
| Rise time | tr | VDD=120 V, VGS=10 V, ID=0.1 A, RG=6 | ns | - | 3.1 | 4.6 |
| Turn-off delay time | td(off) | VDD=120 V, VGS=10 V, ID=0.1 A, RG=6 | ns | - | 13.7 | 20 |
| Fall time | tf | VDD=120 V, VGS=10 V, ID=0.1 A, RG=6 | ns | - | 64.5 | 97 |
| Gate to source charge | Qgs | VDD=192 V, ID=0.1 A, VGS=0 to 10 V | nC | - | 0.16 | 0.22 |
| Gate to drain charge | Qgd | VDD=192 V, ID=0.1 A, VGS=0 to 10 V | nC | - | 0.8 | 1.2 |
| Gate charge total | Qg | VDD=192 V, ID=0.1 A, VGS=0 to 10 V | nC | - | 2.1 | 3.1 |
| Gate plateau voltage | Vplateau | VDD=192 V, ID=0.1 A, VGS=0 to 10 V | V | - | 2.90 | - |
| Diode continuous forward current | IS | A | - | - | 0.11 | |
| Diode pulse current | IS,pulse | A | - | - | 0.43 | |
| Diode forward voltage | VSD | VGS=0 V, IF=0.1 A, Tj=25 C | V | - | 0.81 | 1.2 |
| Reverse recovery time | trr | VR=120 V, IF=0.1 A, diF/dt =100 A/s TA=25 C | ns | - | 42.9 | 64.3 |
| Reverse recovery charge | Qrr | VR=120 V, IF=0.1 A, diF/dt =100 A/s TA=25 C | nC | - | 22.6 | 34 |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina