Low On Resistance N Channel MOSFET SL20N10 Suitable for Power Management and Display Inverter Circuits
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SL20N10 is an N-Channel MOSFET featuring a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is designed for power management applications, including notebook power management, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: SLKORMicro
- Model: SL20N10
- Package: TO-252
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=100VVGS=0V | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 1.5 | 2.5 | V |
| Drain-Source On-State Resistance | VGS=10V ID=12A | -- | 70.0 | 80.0 | m |
| Drain-Source On-State Resistance | VGS=4.5VID=10A | -- | 80.0 | 95.0 | m |
| Input Capacitance | VDS=15VVGS=0V f=1MHz | -- | 1125 | -- | pF |
| Output Capacitance | VDS=15VVGS=0V f=1MHz | -- | 85 | -- | pF |
| Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | -- | 55 | -- | pF |
| Total Gate Charge | VDD=50VID=15A VGS=5VRG=4.7 | -- | 17 | -- | nC |
| Gate Source Charge | VDD=50VID=15A VGS=5VRG=4.7 | -- | 7.5 | -- | nC |
| Gate Drain Charge | VDD=50VID=15A VGS=5VRG=4.7 | -- | 10 | -- | nC |
| Turn-on Delay Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 25 | -- | nS |
| Turn-on Rise Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 430 | -- | nS |
| Turn-Off Delay Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 45 | -- | nS |
| Turn-Off Fall Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 92 | -- | nS |
| Forward on voltage | Tj=25Is=15A | -- | -- | 1.2 | V |
| Common Ratings | |||||
| Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| Gate-Source Voltage | -- | -- | 20 | -- | V |
| Junction Temperature | -- | -- | -- | 150 | C |
| Storage Temperature Range | -- | -50 | -- | 155 | C |
| Continuous Drain Current | Tc=25C, Mounted on Large Heat Sink | -- | -- | 20 | A |
| Pulse Drain Current | -- | -- | -- | 75 | A |
| Tested Diode Continuous Forward Current | -- | -- | -- | 20 | A |
| Maximum Power Dissipation | Tc=25C, Mounted on Large Heat Sink | -- | -- | 45 | W |
| Single pulse Avalanche Energy | -- | -- | 15.3 | -- | mJ |
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