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Silicon NPN Epitaxial Transistor TOSHIBA 2SC6026MFVGR L3F for General Purpose Amplifier Applications

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Product Description

Product Overview

The TOSHIBA 2SC6026MFV is a silicon NPN epitaxial planar transistor designed for general-purpose amplifier applications. It offers high voltage and current capabilities, excellent hFE linearity, and high DC current gain. It is complementary to the 2SA2154MFV.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon NPN Epitaxial Transistor (PCT Process)
  • Origin: Japan (implied by TOSHIBA)

Technical Specifications

CharacteristicSymbolTest ConditionMinTyp.MaxUnit
Collector cutoff currentICBOVCB = 60 V, IE = 0--0.1A
Emitter cutoff currentIEBOVEB = 5 V, IC = 0--0.1A
DC current gainhFEVCE = 6 V, IC = 2 mA120-400-
(Note)
hFE classification Y (Y): 120 to 240, GR (G): 200 to 400
Collector-emitter saturation voltageVCE (sat)IC = 100 mA, IB = 10 mA-0.150.25V
Transition frequencyfTVCE = 10 V, IC = 1 mA60--MHz
Collector output capacitanceCobVCB = 10 V, IE = 0, f = 1 MHz-0.953pF

Absolute Maximum Ratings

CharacteristicSymbolRatingUnit
Collector-base voltageVCBO60V
Collector-emitter voltageVCEO50V
Emitter-base voltageVEBO5V
Collector currentIC150mA
Base currentIB30mA
Collector power dissipationPC150*mW
Junction temperatureTj150C
Storage temperature rangeTstg55 to 150C

Note on Absolute Maximum Ratings: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note on PC: * : Mounted on FR4 board (25.4 mm 25.4 mm 1.6mmt)


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