N Channel MOSFET Slkor SL3134K Featuring Trench Power LV Technology and ESD Protection for Switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor features Trench Power LV MOSFET technology, offering high power and current handling capability. It is designed for load/power switching, interfacing switching, and logic level shift applications. The device is ESD protected up to 3.0KV (HBM).
Product Attributes
- Brand: SLKormicro (implied by website URL)
- Model: SL3134K
- Package: SOT-523
- Certifications: ESD Protected Up to 3.0KV (HBM)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | TA=25unless otherwise noted | 20 | V | ||
| Gate-source Voltage | VGS | 10 | V | |||
| Drain Current @ Steady State (TA=25) | ID | @ Steady State | 0.75 | A | ||
| Drain Current @ Steady State (TA=70) | ID | @ Steady State | 0.6 | A | ||
| Pulsed Drain Current | IDM | 3.0 | A | |||
| Total Power Dissipation @ TA=25 | PD | @ TA=25 | 0.15 | W | ||
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | @ Steady State | 833 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 10V, VDS=0V | 20 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.35 | 0.75 | 1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=0.65A | 135 | 350 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 2.5V, ID=0.3A | 190 | 500 | m | |
| Diode Forward Voltage | VSD | IS=0.5A,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 0.75 | A | |||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 110 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHZ | 18 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHZ | 15 | pF | ||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=0.5A | 1.1 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V,VDS=10V,ID=0.5A | 0.19 | nC | ||
| Gate Drain Charge | Qg | VGS=4.5V,VDS=10V,ID=0.5A | 0.27 | nC | ||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V,RG=10,ID=0.5A | 6.7 | ns | ||
| Turn-on Rise Time | tr | VGS=4.5V,VDD=10V,RG=10,ID=0.5A | 4.8 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=4.5V,VDD=10V,RG=10,ID=0.5A | 17.3 | ns | ||
| Turn-off Fall Time | tf | VGS=4.5V,VDD=10V,RG=10,ID=0.5A | 7.4 | ns | ||
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