N Channel MOSFET Slkor SL13N50FS designed for fast switching and power control in adaptor circuits
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Product Description
Product Overview
The SL13N50FS is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching applications. It features fast switching speeds, low ON resistance, and low gate charge, making it ideal for power switch circuits in adaptors and chargers. This component is available in TO-220F/SL, TO-220C/SL, and TO-263/SL packages.
Product Attributes
- Brand: SLKORMicro
- Certifications: EU RoHS 2011/65/EU directive compliant, UL Flammability Classification Rating 94V-0
- Material: Molded plastic
- Mounting Position: Any
- Lead Finish: Lead free
- Solder Bath Temperature: 275 maximum, 10s per JESD 22-B106
Technical Specifications
| Model | Characteristics | Symbol | Value | Unit | Test Condition |
| SL13N50FS | Drain-Source Voltage | VDSS | 500 | V | |
| Gate-Source Voltage | VGS | 30 | V | ||
| Continue Drain Current | ID | 13 | A | Tc=25C | |
| Pulsed Drain Current | IDM | 52 | A | Note1 | |
| Power Dissipation | PD | 60-150 | W | Tc=25C | |
| Single Pulse Avalanche Energy | EAS | 840 | mJ | Note1 | |
| Operating Temperature Range | TJ | 150 | C | ||
| Storage Temperature Range | TSTG | -55 to +150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0 V,ID = 250 A | |
| Drain-Source Leakage Current | IDSS | 1 | A | VDS = 500 V, VGS = 0 V | |
| Gate Leakage Current | IGSS | 100 | nA | VGS = 30 V, VDS = 0 V | |
| Gate-Source Threshold Voltage | VGS(th) | 2-4 | V | VDS = VGS , ID = 250 A | |
| SL13N50FS | Drain-Source On-State Resistance | RDS(on) | 0.36-0.5 | VGS = 10 V, ID = 6.5 A | |
| Forward Transconductance | gfs | 13 | S | VDS = 15 V, ID = 6.5 A | |
| Input Capacitance | Ciss | 1560 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | |
| Output Capacitance | Coss | 160 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | |
| Reverse Transfer Capacitance | Crss | 17 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | |
| Turn-on Delay Time | td(ON) | 13 | ns | Note2 | |
| Rise Time | tr | 16 | ns | Note2 | |
| Turn-Off Delay Time | td(OFF) | 40 | ns | Note2 | |
| Fall Time | tf | 17 | ns | Note2 | |
| Total Gate Charge | QG | 40 | nC | Note2 | |
| Gate to Source Charge | QGS | 8 | nC | Note2 | |
| Gate to Drain Charge | QGD | 16 | nC | Note2 | |
| SL13N50FS | Maximun Body-Diode Continuous Current | IS | 13 | A | |
| Maximun Body-Diode Pulsed Current | ISM | 52 | A | Note2 | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | ISD = 13 A | |
| Reverse Recovery Time | trr | 482 | ns | Note2 | |
| SL13N50FS | Reverse Recovery Charge | Qrr | 1.7 | C | Note2 |
| Thermal Resistance, Junction to Case | RJC | 2.08 (TO-220F/SL), 0.83 (TO-220C/263) | C/W | ||
| SL13N50FS | Thermal Resistance, Junction to Ambient | RJA | 100 (TO-220F/SL), 62.5 (TO-220C/263) | C/W |
Note1: Pulse test: 300 s pulse width, 2 % duty cycle
Note2: Pulse test: 300 s pulse width, 2 % duty cycle
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