TOSHIBA 2SA1587-GR LF High Voltage Silicon PNP Transistor for Audio Frequency Amplifier Performance

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Product Description

Product Overview

The TOSHIBA 2SA1587 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for general-purpose audio frequency amplifier applications. Key advantages include high voltage capability (VCEO = -120 V), excellent hFE linearity, high hFE, low noise, and a small package. It is complementary to the 2SC4117.

Product Attributes

Brand: TOSHIBA
Type: Silicon PNP Epitaxial Transistor
Process: PCT process
Package: JEDEC SC-70 (2-2E1A)
Weight: 0.006 g (typ.)
Start of commercial production: 1987-01

Technical Specifications

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Collector cut-off current	ICBO	VCB = -120 V, IE = 0	-	-	-0.1	A
Emitter cut-off current	IEBO	VEB = -5 V, IC = 0	-	-	-0.1	A
DC current gain	hFE (Note)	VCE = -6 V, IC = -2 mA	200	-	700	-
Collector-emitter saturation voltage	VCE (sat)	IC = -10 mA, IB = -1 mA	-	-	-0.3	V
Transition frequency	fT	VCE = -6 V, IC = -1 mA	-	100	-	MHz
Collector output capacitance	Cob	VCB = -10 V, IE = 0, f = 1 MHz	-	4	-	pF
Noise figure	NF	VCE = -6 V, IC = -0.1 mA, f = 1 kHz, Rg = 10 k	-	1.0	10	dB

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	-120	V
Collector-emitter voltage	VCEO	-120	V
Emitter-base voltage	VEBO	-5	V
Collector current	IC	-100	mA
Base current	IB	-20	mA
Collector power dissipation	PC	100	mW
Junction temperature	Tj	125	C
Storage temperature range	Tstg	-55 to 125	C