Voltage Amplifier Silicon NPN Transistor TOSHIBA 2SC2881-Y TE12L ZC High Transition Frequency Device

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Product Description

Product Overview

The TOSHIBA 2SC2881 is a silicon NPN epitaxial transistor designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO = 120 V), a high transition frequency (fT = 120 MHz typ.), and a small flat package. This transistor is complementary to the 2SA1201.

Product Attributes

Brand: TOSHIBA
Type: Silicon NPN Epitaxial Transistor (PCT process)
Package: Small flat package (PW-MINI, JEDEC: SC-62, JEITA: 2-5K1A)
Weight: 0.05 g (typ.)
Start of commercial production: 1980-07
Marking: Part No. (or abbreviation code), Lot No., Characteristics indicator
Environmental Compliance: RoHS compatible (indicated by [[G]]/RoHS or [[G]]/RoHS [[Pb]])

Technical Specifications

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Absolute Maximum Ratings
Collector-base voltage	VCBO				120	V
Collector-emitter voltage	VCEO				120	V
Emitter-base voltage	VEBO				5	V
Collector current	IC				800	mA
Base current	IB				160	mA
Collector power dissipation (Note 1)	PC	Mounted on ceramic substrate (250 mm2 0.8 t)			1000	mW
Collector power dissipation (Note 1)	PC	Mounted on ceramic substrate (250 mm2 0.8 t)			500	mW
Junction temperature	Tj				150	C
Storage temperature range	Tstg		-55		150	C
Electrical Characteristics
Collector cut-off current	ICBO	VCB = 120 V, IE = 0			0.1	A
Emitter cut-off current	IEBO	VEB = 5 V, IC = 0			0.1	A
Collector-emitter breakdown voltage	V(BR)CEO	IC = 10 mA, IB = 0	120			V
Emitter-base breakdown voltage	V(BR)EBO	IE = 1 mA, IC = 0	5			V
DC current gain	hFE (Note 3)	VCE = 5 V, IC = 100 mA	80		240
Collector-emitter saturation voltage	VCE(sat)	IC = 500 mA, IB = 50 mA			1.0	V
Base-emitter voltage	VBE	VCE = 5 V, IC = 500 mA			1.0	V
Transition frequency	fT	VCE = 5 V, IC = 100 mA		120		MHz
Collector output capacitance	Cob	VCB = 10 V, IE = 0, f = 1 MHz			30	pF