TOSHIBA RN1313 LXHF Bipolar Transistor Silicon NPN Type Featuring Built In Bias Resistors for Circuit
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Product Description
Product Overview
The RN1312 and RN1313 are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors, manufactured using the PCT process. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. The integrated bias resistor simplifies circuit design, reducing the need for external components, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit diverse circuit requirements. These devices are AEC-Q101 qualified and are complementary to RN2312 to RN2313.
Product Attributes
- Brand: Toshiba
- Type: Bipolar Transistors, Silicon NPN Epitaxial Type
- Process: PCT Process
- Certifications: AEC-Q101 qualified
- Packaging: USM
Technical Specifications
| Characteristic | Symbol | Test Condition | RN1312 Min | RN1312 Typ | RN1312 Max | RN1313 Min | RN1313 Typ | RN1313 Max | Unit |
| Collector cut-off current | ICBO | VCB = 50 V, IE = 0 mA | 100 | 100 | nA | ||||
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 mA | 100 | 100 | nA | ||||
| DC current gain | hFE | VCE = 5 V, IC = 1 mA | 120 | 700 | 120 | 700 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = 5 mA, IB = 0.25 mA | 0.1 | 0.3 | 0.1 | 0.3 | V | ||
| Transition frequency | fT | VCE = 10 V, IC = 5 mA | 250 | 250 | MHz | ||||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0 mA, f = 1 MHz | 3 | 6 | 3 | 6 | pF | ||
| Input resistance | R1 | 15.4 | 22 | 28.6 | 32.9 | 47 | 61.1 | k |
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