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N Channel MOSFET 20V 10A Slkor SL0C10A Featuring Low Gate Charge and Trench Power LV Technology

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This 20V/10A N-Channel MOSFET, utilizing Trench Power LV MOSFET technology, offers high power and current handling capabilities with low gate charge. It is ideal for PWM applications, power management, and load switching scenarios.

Product Attributes

  • Brand: SLKOR
  • Model: SL0C10A
  • Package: PDFN3X3-8L

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBV(BR)DSSVGS=0VID=250A----20V
Zero Gate Voltage Drain CurrentIDSSVDS=20VVGS=0V----1A
Gate-Body Leakage CurrentIGSSVGS=12VVDS=0V----100nA
Gate Threshold VoltageVGS(th)VDS=VGSID=250A0.40.61.1V
Drain-Source On-State ResistanceRDS(on)VGS=4.5VID=10A--9.423m
Drain-Source On-State ResistanceRDS(on)VGS=2.5VID=5A--13.225m
Input CapacitanceCISSVDS=10VID=10AVGS=4.5Vf=1MHz--1544--pF
Output CapacitanceCOSSVDS=10VID=10AVGS=4.5Vf=1MHz--210--pF
Reverse Transfer CapacitanceCRSSVDS=10VID=10AVGS=4.5Vf=1MHz--201--pF
Total Gate ChargeQgVDD=10VID=10AVGS=4.5VRG=3--23.5--nC
Gate Source ChargeQgsVDD=10VID=10AVGS=4.5VRG=3--2.8--nC
Gate Drain ChargeQgdVDD=10VID=10AVGS=4.5VRG=3--5.75--nC
Turn-on Delay Timetd(on)VDD=10VID=10AVGS=4.5VRG=3--3--nS
Turn-on Rise TimetrVDD=10VID=10AVGS=4.5VRG=3--10--nS
Turn-Off Delay Timetd(off)VDD=10VID=10AVGS=4.5VRG=3--35--nS
Turn-Off Fall TimetfVDD=10VID=10AVGS=4.5VRG=3--12--nS
Diode Continuous Forward CurrentISTc=25C----10A
Pulse Drain CurrentIDMTc=25C----35A
Tested Continuous Drain CurrentIDTc=25C----10A
Maximum Junction TemperatureTJ------150C
Storage Temperature RangeTSTG---55--150C
Thermal Resistance Junction-to-AmbientRJAMounted on Large Heat Sink--65--C/W
Maximum Power DissipationPD----1.5--W
Diode Forward on voltageVSDTj=25Is=10A----1.2V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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