TOSHIBA 2SC4207-GR TE85L F High Current Silicon NPN Transistor for Audio Frequency Amplifier Circuits

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Product Description

Product Overview

The TOSHIBA 2SC4207 is a silicon NPN epitaxial transistor utilizing the PCT process, designed for audio frequency general-purpose amplifier applications. It features a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 700), and excellent hFE linearity. It is complementary to the 2SA1618.

Product Attributes

Brand: TOSHIBA
Origin: Japan (implied by Toshiba Corporation)
Material: Silicon
Type: NPN Epitaxial Transistor

Technical Specifications

Characteristics	Symbol	Rating	Unit	Test Condition	Min	Typ.	Max
Collector-base voltage	VCBO	60	V
Collector-emitter voltage	VCEO	50	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	150	mA
Base current	IB	30	mA
Collector power dissipation	PC (Note 3)	300	mW
Junction temperature	Tj (Note 1)	150	C
Junction temperature	Tj (Note 2)	125	C
Storage temperature range	Tstg (Note 1)	-55 to 150	C
Storage temperature range	Tstg (Note 2)	-55 to 125	C
Collector cut-off current	ICBO		A	VCB = 60 V, IE = 0 A			0.1
Emitter cut-off current	IEBO		A	VEB = 5 V, IC = 0 A			0.1
DC current gain	hFE (Note 4)			VCE = 6 V, IC = 2 mA	120		700
Collector-emitter saturation voltage	VCE (sat)		V	IC = 100 mA, IB = 10 mA		0.1	0.25
Transition frequency	fT		MHz	VCE = 10 V, IC = 1 mA	80
Collector output capacitance	Cob		pF	VCB = 10 V, IE = 0 A, f = 1 MHz		2	3.5