High frequency switching Slkor SL8N100F N channel MOSFET with low gate charge and improved dvdt capability

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Product Description

Product Overview

The SL8N100 Series is a high-performance N-channel MOSFET designed for high-frequency switching applications. It features low gate charge, low Crss (typ 9pF), and fast switching speeds, making it ideal for power supplies, electronic ballasts, and UPS systems. The device offers improved dv/dt capability and is 100% avalanche tested, ensuring reliability and robustness in demanding applications. This RoHS-compliant product is available in various package types.

Product Attributes

Brand: SLKormicro
Certifications: RoHS

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Type	Max	Unit	TO-220/TO-247	TO-263/TO-262	TO-220F
Drain-Source Voltage	VDSS	-	1000	-	-	V	-	-	-
Drain Current-continuous	ID	T=25	-	-	8	A	-	-	-
Drain Current-continuous	ID	T=100	-	-	5	A	-	-	-
Drain Current-pulse	IDM	note 1	-	-	32*	A	-	-	-
Gate-Source Voltage	VGS	-	-	-	30	V	-	-	-
Single pulse avalanche energy	EAS	note 2	-	-	650	mJ	-	-	-
Avalanche Current	IAR	note 1	-	-	8	A	-	-	-
Repetitive Avalanche Energy	EAR	note 1	-	-	393	mJ	-	-	-
Power Dissipation	PD	TC=25	-	-	167	W	✔	-	-
Power Dissipation	PD	Derate above 25	-	-	1.43	W/	✔	-	-
Power Dissipation	PD	TC=25	-	-	83	W	-	✔	-
Power Dissipation	PD	Derate above 25	-	-	0.34	W/	-	✔	-
Power Dissipation	PD	TC=25	-	-	31.7	W	-	-	✔
Power Dissipation	PD	Derate above 25	-	-	0.25	W/	-	-	✔
Operating and Storage Temperature Range	TJ,TSTG	-	-55	-	+150		-	-	-
Peak Diode Recovery dv/dt	dv/dt	note 3	-	-	4.5	V/ns	-	-	-
Maximum Lead Temperature for Soldering Purposes	TL	-	-	-	300		-	-	-
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A,referenced to 25	-	1.05	-	V/	-	-	-
Zero Gate Voltage Drain Current	IDSS	VDS=1000V,VGS=0V TC=25	-	-	1	A	-	-	-
Zero Gate Voltage Drain Current	IDSS	VDS=800V,TC =125	-	-	10	A	-	-	-
Gate body leakage current	IGSS	VDS=0V,VGS=30V	-	-	100	nA	-	-	-
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=250A	3.0	-	5.0	V	-	-	-
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V,ID=4A	-	1.8	2.3		-	-	-
Forward Transconductance	gFS	VDS=40V,ID=4A (note 4)	-	5.6	-	S	-	-	-
Input capacitance	Ciss	VDS=25V, VGS=0V, f=1.0MHZ	-	687	-	pF	-	-	-
Output capacitance	Coss	-	-	67	-	pF	-	-	-
Reverse transfer capacitance	Crss	-	-	12	-	pF	-	-	-
Turn-On delay time	td(on)	VDD=500V,ID=8A, RGEN=25 (note 4,5)	-	13	-	ns	-	-	-
Turn-On rise time	tr	-	-	22	-	ns	-	-	-
Turn-Off delay time	td(Off)	-	-	63	-	ns	-	-	-
Turn-Off rise time	tf	-	-	19	-	ns	-	-	-
Total Gate Charge	Qg	VDS=750V,ID=4A, VGS=10V (note 4,5)	-	14	-	nC	-	-	-
Gate-Source charge	Qgs	-	-	4	-	nC	-	-	-
Gate-Drain charge	Qg d	-	-	5	-	nC	-	-	-
Diode Forward Voltage	VSD	VGS=0V,IS=8A (note 3)	-	-	1.4	V	-	-	-
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	-	24	A	-	-	-
Maximum Continuous Drain Source Diode Forward Current	IS	-	-	-	8	A	-	-	-
Reverse recovery time	trr	VGS=0V, IS=4A dIF/dt=100A/s Tc=25 (note 4)	-	159	-	ns	-	-	-
Reverse recovery charge	Qrr	-	-	693	-	nC	-	-	-
Reverse recovery time	trr	VGS=0V, IS=3A dIF/dt=100A/s Tc=100 (note 4)	-	153	-	ns	-	-	-
Reverse recovery charge	Qrr	-	-	685	-	nC	-	-	-
Thermal Resistance, junction to Case	Rth(j-C)	-	-	0.78	-	/W	✔	3	3.94
Thermal Resistance, Junction to Ambient	Rth(j-A)	-	-	62.5	-	/W	-	65	80