PNP Silicon Transistor TOSHIBA 2SA1201-Y TE12L ZC for Voltage Amplifier Power Amplifier Applications
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Product Description
Product Overview
The TOSHIBA 2SA1201 is a silicon PNP epitaxial transistor designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO = -120 V), a high transition frequency (fT = 120 MHz typ.), and comes in a small flat package. It is complementary to the 2SC2881.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor (PCT process)
- Package: PW-MINI (JEDEC: SC-62, JEITA: 2-5K1A)
- Weight: 0.05 g (typ.)
- Start of Commercial Production: 1980-07
- Certifications: RoHS Compatible (indicated by a line beside Lot No.)
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VCBO | -120 | V | |||
| VCEO | -120 | V | ||||
| VEBO | -5 | V | ||||
| Absolute Maximum Ratings | IC | -800 | mA | |||
| IB | -160 | mA | ||||
| PC (Note 1) | 1000 | mW | ||||
| Absolute Maximum Ratings | Tj | 150 | C | |||
| Tstg | -55 | 150 | C | |||
| Electrical Characteristics (Ta = 25C) | ICBO | VCB = -120 V, IE = 0 | -0.1 | A | ||
| IEBO | VEB = -5 V, IC = 0 | -0.1 | A | |||
| V(BR)CEO | IC = -10 mA, IB = 0 | -120 | V | |||
| V(BR)EBO | IE = -1 mA, IC = 0 | -5 | V | |||
| hFE (Note 3) | VCE = -5 V, IC = -100 mA | 80 | 240 | |||
| VCE (sat) | IC = -500 mA, IB = -50 mA | -1.0 | V | |||
| VBE | VCE = -5 V, IC = -500 mA | -1.0 | V | |||
| fT | VCE = -5 V, IC = -100 mA | 120 | MHz | |||
| Electrical Characteristics (Ta = 25C) | Cob | VCB = -10 V, IE = 0, f = 1 MHz | 30 | pF |
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