High Current Slkor SL100N03R Power MOSFET Designed for Industrial Power and AC DC Conversion Applications
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
This Power MOSFET utilizes advanced Trench technology to deliver excellent gate charge and RDS(on) characteristics, resulting in exceptionally low communication and conduction losses. It is highly suitable for AC/DC power conversion, load switch, and industrial power applications.
Product Attributes
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Min. | Typ. | Max. |
| Absolute Maximum Ratings | |||||||
| Drain-source Voltage | VDS | 30 | V | ||||
| Gate-source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current (Note 2) | ID | 100 | A | TC=25 | |||
| Continuous Drain Current (Note 2) | ID | 65 | A | TC=100 | |||
| Pulsed Drain Current (Note 3) | IDM | 400 | A | TC=25, Tp Limited By Tjmax | |||
| Maximum Power Dissipation (Note 2) | PD | 70 | W | TC=25 | |||
| Avalanche energy, single Pulse (Note 1) | EAS | 121 | mJ | L=0.5mH | |||
| Operating Junction And Storage Temperature | Tj,Tstg | -55 To 150 | |||||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | |||||
| Thermal Resistance | |||||||
| Junction-to-Case | RJC | /W | 2.14 | ||||
| Off Characteristic | |||||||
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250µA | 30 | ||
| Zero gate voltage drain current | IDSS | µA | VDS=20V, VGS=0V, TJ=25 | 1 | |||
| Zero gate voltage drain current | IDSS | µA | VDS=16V, VGS=0V, TJ=125 | 10 | |||
| Gate-source leakage current | IGSS | nA | VGS=±20V, VDS=0V | ±100 | |||
| On Characteristic | |||||||
| Gate threshold voltage | VGS(th) | V | VDS=VGS, ID=250µA | 1.0 | 1.5 | 2.5 | |
| Drain-source on-state resistance | RDS(on) | mΩ | VGS=10V, ID=30A | 2.8 | 4 | ||
| Drain-source on-state resistance | RDS(on) | mΩ | VGS=4.5V, ID=20A | 4.6 | 6.5 | ||
| Dynamic Characteristic | |||||||
| Input Capacitance | Ciss | PF | VGS=0V, VDS=15V, f=1.0MHz | 2650 | |||
| Output Capacitance | Coss | PF | VGS=0V, VDS=15V, f=1.0MHz | 393 | |||
| Reverse Transfer Capacitance | Crss | PF | VGS=0V, VDS=15V, f=1.0MHz | 330 | |||
| Switching Characteristics | |||||||
| Turn-on delay time | td(on) | nS | VDS = 15V, VGS =10V, RG = 3Ω, ID = 30A | 23 | |||
| Turn-on Rise time | tr | nS | VDS = 15V, VGS =10V, RG = 3Ω, ID = 30A | 28 | |||
| Turn-off delay time | td(off) | nS | VDS = 15V, VGS =10V, RG = 3Ω, ID = 30A | 74 | |||
| Turn-off Fall time | tf | nS | VDS = 15V, VGS =10V, RG = 3Ω, ID = 30A | 36 | |||
| Gate Total Charge | QG | nC | VGS=10V, VDS=15V, ID=30A | 30 | |||
| Gate-Source Charge | QgS | nC | VGS=10V, VDS=15V, ID=30A | 7.2 | |||
| Gate-Drain Charge | Qgd | nC | VGS=10V, VDS=15V, ID=30A | 10.4 | |||
| Drain-Source Diode Characteristics | |||||||
| Body Diode Forward Voltage | VSD | V | VGS=0V, ISD=30A, TJ = 25 | 1.2 | |||
| Body Diode Forward Current | Is | A | 100 | ||||
| Body Diode Reverse Recovery Time | Trr | ns | TJ=25, ISD=20A, VGS=0V, di/dt =100A/μs | 28 | |||
| Body Diode Reverse Recovery Charge | Qrr | nC | TJ=25, ISD=20A, VGS=0V, di/dt =100A/μs | 21 | |||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina