High Frequency Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F with Small Reverse Transfer Capacitance

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Product Description

Product Overview

The 2SC2714 is a Silicon NPN Epitaxial Planar Type transistor manufactured by TOSHIBA, utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a low noise figure (NF = 2.5dB typ.).

Product Attributes

Brand: TOSHIBA
Type: Silicon NPN Epitaxial Planar Type
Process: PCT process
Package: JEDEC TO-236 / JEITA SC-59 (TOSHIBA 2-3F1A)
Weight: 12 mg (typ.)
Start of Commercial Production: 1982-10

Technical Specifications

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Absolute Maximum Ratings (Ta = 25C)
Collector-base voltage	VCBO				40	V
Collector-emitter voltage	VCEO				30	V
Emitter-base voltage	VEBO				4	V
Collector current	IC				20	mA
Base current	IB				4	mA
Collector power dissipation	PC				100	mW
Junction temperature	Tj				125	C
Storage temperature range	Tstg		-55		125	C
Electrical Characteristics (Ta = 25C)
Collector cut-off current	ICBO	VCB = 40 V, IE = 0			0.5	A
Emitter cut-off current	IEBO	VEB = 4 V, IC = 0			0.5	A
DC current gain	hFE (Note)	VCE = 6 V, IC = 1 mA	40		200
Reverse transfer capacitance	Cre	VCB = 6 V, f = 1 MHz		0.70		pF
Transition frequency	fT	VCE = 6 V, IC = 1 mA		550		MHz
Collector-base time constant	Ccrbb	VCB = 6 V, IE = 1 mA, f = 30 MHz			30	ps
Noise figure	NF			2.5	5.0	dB
Power gain	Gpe	VCC = 6 V, IE = 1 mA, f = 100 MHz, Figure 1		17	23	dB
Common emitter parameters (typ.) (VCE = 6 V, IE = 1 mA, f = 100 MHz, Ta = 25C)
Input conductance	gie			2.9		mS
Input capacitance	Cie			10.2		pF
Reverse transfer admittance	yre			0.33		mS
Phase angle of reverse transfer admittance	re			-90
Forward transfer admittance	\|yfe\|			40		mS
Phase angle of forward transfer admittance	fe			-20
Output conductance	goe			45		S
Output capacitance	Coe			1.1		pF
Common base parameters (typ.) (VCE = 6 V, IE = 1 mA, f = 100 MHz, Ta = 25C)
Input conductance	gib			34		mS
Input capacitance	Cib			-10		pF
Reverse transfer admittance	yrb			0.27		mS
Phase angle of reverse transfer admittance	rb			-105
Forward transfer admittance	\|yfb\|			34		mS
Phase angle of forward transfer admittance	fb			165
Output conductance	gob			45		S
Output capacitance	Cob			1.1		pF