Low On Resistance N Channel MOSFET Slkor WNM2021 Designed for Load Switching in Portable Electronics
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Product Description
Product Overview
The NM2021 is a W N-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power handling with low on-resistance.
Product Attributes
- Brand: W
- Model: NM2021
- Package: SOT-323
- Type: N-Channel MOSFET
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Characteristics | Drain-source breakdown voltage | VGS = 0V, ID =10A | 20 | V | ||
| Gate-threshold voltage | VDS =VGS, ID =50A | 0.65 | 0.95 | 1.2 | V | |
| Gate-body leakage | VDS =0V, VGS =8V | 100 | nA | |||
| Zero gate voltage drain current | VDS =20V, VGS =0V | 1 | A | |||
| Drain-source on-resistance | VGS =4.5V, ID =2A | 0.058 | ||||
| Drain-source on-resistance | VGS =2.5V, ID =1A | 0.086 | ||||
| Forward transconductance | VDS =5V, ID =2.3A | 8 | S | |||
| Diode Characteristics | Diode forward voltage | IS=0.94A,VGS=0V | 0.76 | 1.2 | V | |
| Continuous Source-Drain Current(Diode Conduction) | 0.6 | A | ||||
| Dynamic Characteristics | Total gate charge | VDS =10V,VGS =4.5V,ID =3.6A | 4.0 | 10 | nC | |
| Gate-source charge | VDS =10V,VGS =4.5V,ID =3.6A | 0.65 | nC | |||
| Gate-drain charge | VDS =10V,VGS =4.5V,ID =3.6A | 1.5 | nC | |||
| Input capacitance | VDS =10V,VGS =0V,f=1MHz | 300 | pF | |||
| Output Capacitance | Output capacitance | VDS =10V,VGS =0V,f=1MHz | 120 | pF | ||
| Reverse transfer capacitance | VDS =10V,VGS =0V,f=1MHz | 80 | pF | |||
| Switching Characteristics | Turn-on delay time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 7 | 15 | ns | |
| Rise time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 55 | 80 | ns | ||
| Turn-off delay time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 16 | 60 | ns | ||
| Fall time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 10 | 25 | ns | ||
| Maximum Ratings | Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 2.3 | A | |||
| Power Dissipation | PD | 0.2 | W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~+150 | |||
| Thermal Resistance | Junction to Ambient (t5s) | RJA | 625 | /W |
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