Built In Bias Resistor Silicon PNP Transistor TOSHIBA RN2402 LF for and Fast Switching Circuit Designs
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Product Description
Product Overview
The RN2401 to RN2406 series are silicon PNP epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. The integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various circuit designs. These devices are AEC-Q101 qualified and complementary to the RN1401 to RN1406 series.
Product Attributes
- Brand: Toshiba
- Material: Silicon
- Certifications: AEC-Q101 qualified
Technical Specifications
| Part Number | Collector-base voltage (VCBO) | Collector-emitter voltage (VCEO) | Emitter-base voltage (VEBO) | Collector current (IC) | Collector power dissipation (PC) | Junction temperature (Tj) | Storage temperature (Tstg) | R1 (k) | R2 (k) |
| RN2401 | -50 V | -50 V | -10 V | -5 mA | 200 mW (Ta=25C) | 150 C | -55 to 150 C | 4.7 | 4.7 |
| RN2402 | -50 V | -50 V | -10 V | -5 mA | 200 mW (Ta=25C) | 150 C | -55 to 150 C | 10 | 10 |
| RN2403 | -50 V | -50 V | -10 V | -5 mA | 200 mW (Ta=25C) | 150 C | -55 to 150 C | 22 | 22 |
| RN2404 | -50 V | -50 V | -10 V | -5 mA | 200 mW (Ta=25C) | 150 C | -55 to 150 C | 47 | 47 |
| RN2405 | -50 V | -50 V | -10 V | -5 mA | 100 mW (Ta=25C) | 150 C | -55 to 150 C | 2.2 | 47 |
| RN2406 | -50 V | -50 V | -10 V | -5 mA | 100 mW (Ta=25C) | 150 C | -55 to 150 C | 4.7 | 47 |
| Characteristic | Symbol | Test Condition | RN2401 | RN2402 | RN2403 | RN2404 | RN2405 | RN2406 | Unit |
| Collector cut-off current | ICBO | VCB = -50 V, IE = 0 mA | Max -100 | Max -100 | Max -100 | Max -100 | Max -100 | Max -100 | nA |
| Emitter cut-off current | IEBO | VEB = -10 V, IC = 0 mA | Max -1.52 | Max -0.71 | Max -0.33 | Max -0.15 | Max -0.145 | Max -0.138 | A |
| DC current gain | hFE | VCE = -5 V, IC = -10 mA | Min 30 | Min 50 | Min 70 | Min 80 | Min 80 | Min 80 | - |
| Collector-emitter saturation voltage | VCE(sat) | IC = -5 mA, IB = -0.25 mA | Max -0.82 | Max -0.38 | Max -0.17 | Max -0.082 | Max -0.078 | Max -0.074 | V |
| Input voltage (ON) | VI(ON) | VCE = -0.2 V, IC = -5 mA | Typ. -1.1 | Typ. -1.2 | Typ. -1.3 | Typ. -1.5 | Typ. -0.6 | Typ. -0.7 | V |
| Input voltage (OFF) | VI(OFF) | VCE = -5 V, IC = -0.1 mA | Typ. -0.1 | Typ. -0.1 | Typ. -0.1 | Typ. -0.1 | Typ. -0.1 | Typ. -0.1 | V |
| Transition frequency | fT | VCE = -10 V, IC = -5 mA | Typ. 200 | Typ. 200 | Typ. 200 | Typ. 200 | Typ. 200 | Typ. 200 | MHz |
| Collector output capacitance | Cob | VCB = -10 V, IE = 0 mA, f = 1 MHz | Typ. 3.29 | Typ. 7 | Typ. 15.4 | Typ. 32.9 | Typ. 1.54 | Typ. 3.29 | pF |
| Input resistance | R1 | - | Typ. 4.7 | Typ. 10 | Typ. 22 | Typ. 47 | Typ. 2.2 | Typ. 4.7 | k |
| Resistor ratio | R1/R2 | - | Typ. 1.0 | Typ. 1.0 | Typ. 1.0 | Typ. 1.0 | Typ. 0.0468 | Typ. 0.1 | - |
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