Switching inverter and driver circuit silicon transistor TOSHIBA RN4903 LF CT with integrated bias resistor
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Delivery Time:
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Product Description
Product Overview
The RN4903 is a silicon PNP/NPN epitaxial bipolar transistor featuring an integrated bias resistor. This design simplifies external circuitry, reducing system size and assembly time. It is suitable for switching, inverter circuits, interfacing, and driver circuit applications.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
- Package Type: US6 (ultra super mini type with 6 leads)
Technical Specifications
| Collector-base voltage (VCBO) | Collector-emitter voltage (VCEO) | Emitter-base voltage (VEBO) | Collector current (IC) | Collector power dissipation (PC) | Junction temperature (Tj) | Storage temperature (Tstg) | |
| Q1 Absolute Maximum Ratings | -50 V | -50 V | -10 V | -100 mA | 200 mW | 150 | -55 to 150 |
| Q2 Absolute Maximum Ratings | 50 V | 50 V | 10 V | 100 mA |
| Collector cut-off current (ICBO) | Collector cut-off current (ICEO) | Emitter cut-off current (IEBO) | DC current gain (hFE) | Collector-emitter saturation voltage (VCE(sat)) | Input voltage (ON) (VI(ON)) | Input voltage (off) (VI(off)) | Transition frequency (fT) | Collector output capacitance (Cob) | Input resistance (R1) | Resistor ratio (R1/R2) | |
| Q1 Electrical Characteristics | Min: -100 nA Max: -500 nA | Min: -0.17 mA Max: -0.33 mA | Min: -100 nA | Min: 70 Typ: 200 | Typ: -0.1 V Max: -0.3 V | Typ: -1.3 V | Typ: -1.0 V | Typ: 6 MHz | Typ: 3 pF | Min: 15.4 k Typ: 22 k Max: 28.6 k | Min: 0.9 Typ: 1.0 Max: 1.1 |
| Q2 Electrical Characteristics | Min: 100 nA Max: 500 nA | Min: 0.17 mA Max: 0.33 mA | Min: 100 nA | Min: 70 Typ: 250 | Typ: 0.1 V Max: 0.3 V | Typ: 1.3 V | Typ: 1.0 V | Typ: 6 MHz | Typ: 3 pF |
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