NPN transistor Slkor 2SC1623 designed for high DC current gain and voltage capability in electronics

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Product Description

Product Overview

This NPN transistor offers high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V). It is suitable for applications requiring stable current amplification and voltage handling.

Product Attributes

Type: NPN Transistor
Marking: L4, L5, L6, L7
Package: SOT-23
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
Brand: SLKOR (Implied by website URL)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
FEATURES
High DC current gain	hFE	VCE=6V, IC=1mA		200
High voltage	VCEO				50	V
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				50	V
Emitter-Base Voltage	VEBO				5	V
Collector Current -Continuous	IC				100	mA
Collector Power Dissipation	PC				200	mW
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	50			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=60V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0			0.1	A
DC current gain	hFE	VCE=6V, IC=1mA	90	200	600
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=10mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=10mA			1	V
Transition frequency	fT	VCE=6V, IC=10mA, f=30MHz		150		MHz
CLASSIFICATION OF hFE
Rank
	L4	90-180
	L5	135-270
	L6	200-400
	L7	300-600