Silicon PNP Epitaxial Transistor Integrated Bias Resistors TOSHIBA RN2311 TE85L F for Switching Circuits
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Product Description
Product Overview
The RN2310 and RN2311 are silicon PNP epitaxial bipolar transistors featuring integrated bias resistors. This design reduces the need for external components, leading to smaller system sizes and faster assembly times. They are suitable for switching, inverter circuits, interfacing, and driver circuits. These transistors are complementary to the RN1310 to RN1311 series.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
- Material: Silicon PNP Epitaxial Type (PCT Process)
- Origin: Japan (implied by Toshiba)
Technical Specifications
| Characteristic | Symbol | RN2310 | RN2311 | Unit | Test Condition |
|---|---|---|---|---|---|
| Collector cut-off current | ICBO | -100 (Max) | -100 (Max) | nA | VCB = -50 V, IE = 0 mA |
| Emitter cut-off current | IEBO | -100 (Max) | -100 (Max) | nA | VEB = -5 V, IC = 0 mA |
| DC current gain | hFE | 120 (Min) - 400 (Max) | 120 (Min) - 400 (Max) | VCE = -5 V, IC = -1 mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.1 (Typ) - -0.3 (Max) | -0.1 (Typ) - -0.3 (Max) | V | IC = -5 mA, IB = -0.25 mA |
| Transition frequency | fT | 200 (Typ) | 200 (Typ) | MHz | VCE = -10 V, IC = -5 mA |
| Collector output capacitance | Cob | 3 (Typ) - 6 (Max) | 3 (Typ) - 6 (Max) | pF | VCB = -10 V, IE = 0 mA, f = 1 MHz |
| Input resistance | R1 | 4.7 (Typ) - 13 (Max) | 4.7 (Typ) - 13 (Max) | k | |
| Collector-base voltage | VCBO | -50 | -50 | V | |
| Collector-emitter voltage | VCEO | -50 | -50 | V | |
| Emitter-base voltage | VEBO | -5 | -5 | V | |
| Collector current | IC | -100 | -100 | mA | |
| Collector power dissipation | PC | 100 | 100 | mW | Ta = 25 |
| Junction temperature | Tj | 150 | 150 | ||
| Storage temperature | Tstg | -55 to 150 | -55 to 150 |
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