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Power Electronics Device Slkor SL3414A N Channel Enhancement Mode MOSFET for Electronic Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

N-Channel Enhancement-Mode MOSFETs designed for various electronic applications. These devices offer efficient switching characteristics and are suitable for a range of power management tasks.

Product Attributes

  • Brand: SLKOR Micro
  • Model: SL3414A
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

CharacteristicSymbolMinTypMaxUnitConditions
Drain-Source Breakdown VoltageBVDSS20VID = 250uA,VGS=0V
Gate Threshold VoltageVGS(th)0.40.61VID = 250uA,VGS= VDS
Diode Forward Voltage DropVSD1VIS= 1A,VGS=0V
Zero Gate Voltage Drain CurrentIDSS1uAVGS=0V, VDS= 16V
Zero Gate Voltage Drain Current (High Temp)IDSS5uAVGS=0V, VDS= 16V, TA=55
Gate Body LeakageIGSS+100nAVGS=+8V, VDS=0V
Static Drain-Source On-State ResistanceRDS(ON)4152mID=4.2A,VGS=4.5V
Static Drain-Source On-State ResistanceRDS(ON)5063mID=3.7A,VGS=2.5V
Static Drain-Source On-State ResistanceRDS(ON)6787mID=3.2A,VGS=1.8V
Input CapacitanceCISS436pFVGS=0V, VDS= 10V,f=1MHz
Common Source Output CapacitanceCOSS66pFVGS=0V, VDS= 10V,f=1MHz
Turn-ON Timet(on)5.5nsVDS= 10V, VGS=5V, RGEN=6
Turn-OFF Timet(off)40nsVDS= 10V, VGS=5V, RGEN=6, Pulse Width<300s; Duty Cycle<2.0%

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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