High Speed Switching Silicon N Channel IGBT TOSHIBA GT60M324Q with 175C Maximum Junction Temperature
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Product Description
Product Overview
The TOSHIBA GT60M324 is a Sixth Generation Insulated Gate Bipolar Transistor (IGBT) made of Silicon N Channel. It is designed for consumer applications and voltage resonance inverter switching applications. Key advantages include a built-in Fast Recovery Diode (FRD), high-speed switching capabilities with a typical fall time of 0.11s, low saturation voltage of 1.70V (typ.), and a high junction temperature rating of 175C (max). It is RoHS compatible.
Product Attributes
- Brand: TOSHIBA
- Material: Silicon N Channel
- Certifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
- Origin: Japan (implied by TOSHIBA)
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Absolute Maximum Ratings | VCES | 900 | V | ||||
| VGES | ± 25 | V | |||||
| IC (DC) | 60 | A | |||||
| ICP (1ms) | 120 | ||||||
| IF (DC) | 15 | A | |||||
| IFP (1ms) | 120 | ||||||
| PC (Tc = 25°C) | 254 | W | |||||
| Tj | 175 | °C | |||||
| Tstg | -40 to 175 | °C | |||||
| Electrical Characteristics | IGES | nA | VGE = ±25 V, VCE = 0 | ± 500 | |||
| ICES | mA | VCE = 900 V, VGE = 0 | 1.0 | ||||
| VGE (OFF) | 4.5 | V | IC = 60 mA, VCE = 5 V | 4.5 | 7.5 | ||
| VCE (sat) (IC = 10 A, VGE = 15 V) | V | 1.10 | 1.60 | ||||
| VCE (sat) (IC = 30 A, VGE = 15 V) | V | 1.40 | 1.85 | ||||
| VCE (sat) (IC = 60 A, VGE = 15 V) | V | 1.70 | 2.00 | ||||
| Cies (VCE = 10 V, VGE = 0, f = 1 MHz) | 3600 | pF | 3600 | ||||
| Switching Time | tr | Resistive Load VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 51 Ω | 0.19 | ||||
| ton | 0.31 | ||||||
| tf | 0.11 | 0.22 | |||||
| toff | 0.60 | ||||||
| trr (di/dt = -20 A/μs) | 0.8 | μs | IF = 15 A, VGE = 0 | 0.8 | |||
| Thermal Resistance | Rth(j-c) (IGBT) | 0.59 | °C/W | ||||
| Rth(j-c) (Diode) | 4.0 | °C/W |
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