Compact SOT523 TrenchFET Power MOSFET TWGMC SI2302T for Load Switch and DC DC Converter Applications
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Delivery Time:
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Product Description
Product Overview
The SI2302T is a TrenchFET Power MOSFET designed as a load switch for portable devices and DC/DC converters. It offers efficient power management in a compact SOT-523 package.
Product Attributes
- Brand: GMC (implied by www.tw-gmc.com)
- Device Code: R5
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | 2.1 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | 0.6 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 357 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =10A | 20 | V | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.60 | 0.95 | 1.2 | V |
| Gate-body leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =20V, VGS =0V | 1 | A | ||
| Drain-source on-resistance | rDS(on) | VGS =4.5V, ID =2.0A | 0.045 | 0.060 | ||
| Drain-source on-resistance | rDS(on) | VGS =2.5V, ID =1.0A | 0.070 | 0.115 | ||
| Forward transconductance | gfs | VDS =5V, ID =2.0A | 8 | S | ||
| Diode forward voltage | VSD | IS=0.94A,VGS=0V | 0.76 | 1.2 | V |
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