N Channel Enhancement Mode MOSFET Slkor BSS138 with 50V Drain Source Voltage and 220mA Continuous Current

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Product Description

Product Overview

The BSS138 is an N-Channel Enhancement-Mode MOS FET designed for various electronic applications. It offers a maximum drain-source voltage of 50V and a continuous drain current of 220mA, with a pulsed drain current of up to 880mA. This device is suitable for applications requiring efficient switching and amplification.

Product Attributes

Brand: slkormicro.com
Model: BSS138

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Breakdown Voltage	BVDSS	50	-	-	V	(ID =250uA,VGS=0V)
Gate Threshold Voltage	VGS(th)	0.8	-	1.6	V	(ID =1mA,VGS= VDS)
Diode Forward Voltage Drop	VSD	-	-	1.4	V	(ISD=220mA,VGS=0V)
Zero Gate Voltage Drain Current	IDSS	-	-	0.5	uA	(VGS=0V, VDS= BVDSS)
Zero Gate Voltage Drain Current	IDSS	-	-	100	nA	(VGS=0V, VDS=0.6BVDSS)
Gate Body Leakage	IGSS	-	-	+100	nA	(VGS=+20V, VDS=0V)
Static Drain-Source On-State Resistance	RDS(ON)	-	-	3.5		(ID=220mA,VGS=10V)
Static Drain-Source On-State Resistance	RDS(ON)	-	-	6		(ID=220mA,VGS=4.5V)
Input Capacitance	CISS	-	-	50	pF	(VGS=0V, VDS=25V,f=1MHz)
Common Source Output Capacitance	COSS	-	-	25	pF	(VGS=0V, VDS=25V,f=1MHz)
Turn-ON Time	t(on)	-	-	20	ns	(VDS=30V, ID=200mA, RGEN=25)
Turn-OFF Time	t(off)	-	-	20	ns	(VDS=30V, ID=200mA, RGEN=25)
Total Device Dissipation	PD	-	225	-	mW	TA=25
Total Device Dissipation Derate	-	-	1.8	-	mW/	Derate above25
Thermal Resistance Junction to Ambient	RJA	-	350	-	/W	-
Junction and Storage Temperature	TJ,Tstg	-55	-	+150		-