N Channel Power MOSFET Slkor BSS123 with 100V Drain Source Voltage and 150mA Continuous Drain Current

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Product Description

Product Overview

The BSS123 is an N-Channel Power MOSFET designed for various electronic applications. It offers robust performance with a maximum drain-source voltage of 100V and continuous drain current of 150mA.

Product Attributes

Brand: slkormicro
Model: BSS123
Package Type: SOT-23

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Notes
MAXIMUM RATINGS
Drain-Source Voltage	BVDSS			100	V
Gate-Source Voltage	VGS			+20	V
Drain Current-continuous	IDR			150	mA
Drain Current-pulsed	IDRM			600	mA
THERMAL CHARACTERISTICS
Total Device Dissipation TA=25	PD			250	mW
Derate above25				1.8	mW/
Thermal Resistance Junction to Ambient	RJA			500	/W
Junction and Storage Temperature	TJ,Tstg	-55		+150
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Drain-Source Breakdown Voltage (ID =10uA,VGS=0V)	BVDSS	100			V
Gate Threshold Voltage (ID =1mA,VGS= VDS)	VGS(th)	1.0		2.8	V
Diode Forward Voltage Drop (ISD=200mA,VGS=0V)	VSD			1.5	V
Zero Gate Voltage Drain Current (VGS=0V, VDS= 80V)	IDSS			1	uA
Gate Body Leakage (VGS=+20V, VDS=0V)	IGSS			+10	uA
Static Drain-Source On-State Resistance (ID=120mA,VGS=10V)	RDS(ON)		3.5	6
Input Capacitance (VGS=0V, VDS=25V,f=1MHz)	CISS			40	pF
Common Source Output Capacitance (VGS=0V, VDS=25V,f=1MHz)	COSS			25	pF
Turn-ON Time (VDS=50V, ID=200mA, RGEN=25)	t(on)			10	ns
Turn-OFF Time (VDS=50V, ID=200mA, RGEN=25)	t(off)			20	ns
Package Information
Dimension A		0.900		1.150	mm
Dimension A1		0.000		0.100	mm
Dimension A2		0.900		1.050	mm
Dimension b		0.300		0.500	mm
Dimension c		0.080		0.150	mm
Dimension D		2.800		3.000	mm
Dimension E		1.200		1.400	mm
Dimension E1		2.250		2.550	mm
Dimension e		0.950	TYP		mm
Dimension e1		1.800		2.000	mm
Dimension L		0.550	REF		mm
Dimension L1		0.300		0.500	mm
Dimension		0		8