Trench Power MV MOSFET Slkor BSN20 Featuring Low Input Output Leakage and High Switching Speed for Electronics

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Product Description

Product Overview

The BSN20 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It functions as a voltage-controlled small signal switch with low input capacitance and fast switching speed, offering low input/output leakage. This device is ideal for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS.

Product Attributes

Brand: slkormicro (implied from URL)
Model: BSN20

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings	VDS				50	V
	VGS				20	V
	ID				300	mA
	IDM	Pulsed Drain Current				1.5	A
	PD	@ TA=25				350	mW
	RJA	Junction-to-Ambient @ Steady State	B			357	/ W
	TJ ,TSTG	Junction and Storage Temperature Range		-55		+150
Electrical Characteristics	BVDSS	VGS= 0V, ID=250A	50			V
	IDSS	VDS=50V,VGS=0V			1	A
	IGSS1	VGS= 20V, VDS=0V			100	nA
	IGSS2	VGS= 10V, VDS=0V			50	nA
	VGS(th)	VDS= VGS, ID=250A	0.4		1.5	V
	RDS(ON)	VGS= 10V, ID=100mA		1.3	2.5
	RDS(ON)	VGS= 4.5V, ID=50mA		1.5	3.0
Diode Characteristics	VSD	IS=100mA,VGS=0V			1.2	V
	IS	Maximum Body-Diode Continuous Current				100	mA
	trr	VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s	A. Pulse Test: Pulse Width300us,Duty cycle 2%.			30	ns
Dynamic Parameters	Ciss	VDS=25V,VGS=0V,f=1MHZ			17.5	pF
	Coss				11.5	pF
	Crss				6.5	pF
	Qg	VGS=10V,VDS=25V,ID=0.3A		1.7	2.4	nC
Switching Parameters	tD(on)	VGS=10V,VDD=25V, ID=300mA, RGEN=6		5		ns
Switching Parameters	tD(off)				17		ns