High Speed Switching Power MOSFET Slkor SL607B N Channel and P Channel for Wireless Charging Systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This N-Channel and P-Channel complementary Power MOSFET series features Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for applications such as wireless chargers, load switches, and power management.
Product Attributes
- Brand: SLKORMICRO
- Package: TO-252-4L
Technical Specifications
| Parameter | Symbol | N-Channel (Typical) | P-Channel (Typical) | Unit |
| Product Summary | ||||
| VDS | VDS | 30V | -30V | V |
| ID | ID | 12A | -8A | A |
| RDS(ON) (at VGS=10V) | RDS(ON) | <30m | <55m | m |
| RDS(ON) (at VGS=4.5V) | RDS(ON) | <45m | <80m | m |
| Absolute Maximum Ratings (TA=25) | ||||
| Drain-source Voltage | VDS | 30 | -30 | V |
| Gate-source Voltage | VGS | 20 | 20 | V |
| Drain Current | ID | 12 | -8 | A |
| Pulsed Drain Current | IDM | 30 | -20 | A |
| Total Power Dissipation | PD | 15 | 15 | W |
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | 62.5 | /W |
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | ||
| N-MOS Electrical Characteristics (TJ=25) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | |
| Gate-Body Leakage Current | IGSS | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | 1.0 ~ 2.2 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | 20 (VGS=10V, ID=5.6A) / 30 (VGS=4.5V, ID=5.0A) | m | |
| Diode Forward Voltage | VSD | 1.2 (IS=5.6A,VGS=0V) | V | |
| Input Capacitance | Ciss | 490 (VDS=15V,VGS=0V,f=1MHZ) | pF | |
| Output Capacitance | Coss | 92 | pF | |
| Reverse Transfer Capacitance | Crss | 69 | pF | |
| Total Gate Charge | Qg | 5.2 (VGS=10V,VDS=15V,ID=5.6A) | nC | |
| Gate-Source Charge | Qgs | 0.9 | ||
| Gate-Drain Charge | Qg | 1.2 | ||
| Reverse Recovery Chrage | Qrr | 1.28 (IF=5.6A, di/dt=100A/us) | ||
| Reverse Recovery Time | trr | 16.5 (IF=5.6A, di/dt=100A/us) | ns | |
| Turn-on Delay Time | tD(on) | 4.5 (VGS=4.5V, VDS=15V, ID=1A, RGEN=3) | ns | |
| Turn-on Rise Time | tr | 2.5 | ns | |
| Turn-off Delay Time | tD(off) | 12.8 | ns | |
| Turn-off fall Time | tf | 3.5 | ns | |
| P-MOS Electrical Characteristics (TJ=25) | ||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | |
| Gate-Body Leakage Current | IGSS | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | -1.0 ~ -2.4 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | 43 (VGS=-10V, ID=-5.0A) / 55 (VGS=-4.5V, ID=-4.0A) | m | |
| Diode Forward Voltage | VSD | -1.2 (IS=-4A,VGS=0V) | V | |
| Input Capacitance | Ciss | 719 (VDS=-15V,VGS=0V,f=1MHZ) | pF | |
| Output Capacitance | Coss | 441 | pF | |
| Reverse Transfer Capacitance | Crss | 118 | pF | |
| Total Gate Charge | Qg | 27 (VGS=-10V,VDS=-15V,ID=-5.1A) | nC | |
| Gate-Source Charge | Qgs | 2.6 | ||
| Gate-Drain Charge | Qg | 6.6 | ||
| Turn-on Delay Time | tD(on) | 8 (VGS=-10V, VDS=-15V, ID=-1A, RGEN=6) | ns | |
| Turn-on Rise Time | tr | 15 | ns | |
| Turn-off Delay Time | tD(off) | 77 | ns | |
| Turn-off fall Time | tf | 42 | ns | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina