650V 50A SPTECH SPT50N65F1A Trench Field Stop IGBT designed for performance in welding and solar systems

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Price: Negotiable

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Product Description

Product Overview

The SPT50N65F1A is a 650V, 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It features low switching losses, high energy efficiency, and excellent avalanche capability, making it ideal for motion control, solar applications, and welding machines. The Trench-Stop Technology ensures high-speed switching, temperature stability, short circuit withstand time, and easy parallel switching.

Product Attributes

Brand: SPTECH
Product Code: SPT50N65F1A
Package: TO247
Packaging: Tube

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	BVCES	VGE=0V , IC=250uA	650	-	-	V
Collector-Emitter Breakdown Voltage	BVCES	VGE=0V , IC=1mA	650	-	-	V
Gate Threshold Voltage	VGE(th)	VGE=VCE, IC=250uA	4.0	5.0	6.0	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=50A, Tj = 25C	-	-	1.8	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=50A, Tj = 150C	-	-	2.1	V
Zero Gate Voltage Collector Current	ICES	VCE = 650V, VGE = 0V, Tj = 25C	-	0.1	-	A
Zero Gate Voltage Collector Current	ICES	VCE = 650V, VGE = 0V, Tj = 150C	-	40	1000	A
Gate-Emitter Leakage Current	IGES	VCE = 0V, VGE = 20V	-	-	100	nA
Transconductance	gfs	VCE = 20V, IC = 50A	-	30	-	S
Input Capacitance	Cies	VCE = 30V, VGE = 0V, f = 1MHz	-	2800	-	pF
Output Capacitance	Coes	VCE = 30V, VGE = 0V, f = 1MHz	-	130	-	pF
Reverse Transfer Capacitance	Cres	VCE = 30V, VGE = 0V, f = 1MHz	-	75	-	pF
Gate Charge	QG	VCC = 960V, IC = 40A, VGE = 15V	-	180	-	nC
Short Circuit Collector Current	ICSC	VGE=15V,tSC5us, VCC=400V, Tjstart=25C	-	310	-	A
Turn-on Delay Time	td(on)	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C	-	40	-	ns
Rise Time	tr	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C	-	22	-	ns
Turn-off Delay Time	td(off)	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C	-	180	-	ns
Fall Time	tf	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C	-	88	-	ns
Turn-on Energy	Eon	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C	-	1.9	-	mJ
Turn-off Energy	Eoff	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C	-	1.1	-	mJ
Turn-on Delay Time	td(on)	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C	-	40	-	ns
Rise Time	tr	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C	-	25	-	ns
Turn-off Delay Time	td(off)	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C	-	195	-	ns
Fall Time	tf	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C	-	100	-	ns
Turn-on Energy	Eon	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C	-	2.2	-	mJ
Turn-off Energy	Eoff	VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C	-	1.25	-	mJ
Diode Forward Voltage	VFM	IF = 50A	-	2.4	-	V
Reverse Recovery Time	Trr	IF= 40A, VR = 300V, di/dt= 600A/s	-	90	-	ns
Reverse Recovery Current	Irr	IF= 40A, VR = 300V, di/dt= 600A/s	-	17	-	A
Reverse Recovery Charge	Qrr	IF= 40A, VR = 300V, di/dt= 600A/s	-	900	-	nC
IGBT thermal resistance, junction - case	R(j-c)	-	-	-	0.48	K/W
Diode thermal resistance, junction - case	R(j-c)	-	-	-	1.1	K/W
Thermal resistance, junction - ambient	R(j-a)	-	-	-	40	K/W
Collector-Emitter Breakdown Voltage	VCE	-	650	-	-	V
DC collector current, limited by Tjmax	IC	TC = 25C	-	100	-	A
DC collector current, limited by Tjmax	IC	TC = 100C	-	50	-	A
Diode Forward current, limited by Tjmax	IF	TC = 25C	-	100	-	A
Diode Forward current, limited by Tjmax	IF	TC = 100C	-	50	-	A
Turn off safe operating area	-	VCE 650V, Tj 150C	-	150	-	A
Short Circuit Withstand Time	Tsc	VGE= 15V, VCE 400V	-	5	-	s
Power dissipation , Tj=25	Ptot	-	-	-	260	W
Operating junction temperature	Tj	-	-40	-	150	C
Storage temperature	Ts	-	-55	-	150	C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s	-	-	-	-	260	C