Soft Switching IGBT SPTECH SPT25N135F1A Featuring Low Switching Losses and High Avalanche Ruggedness
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Product Description
Product Overview
The SPT25N135F1A is a Field Stop Trench IGBT from SPTECH, offering low switching losses, high energy efficiency, and high avalanche ruggedness. It is designed for soft switching applications, featuring a high breakdown voltage of 1350V for enhanced reliability. Its Trench-Stop Technology provides high-speed switching, temperature-stable ruggedness, low VCEsat, and easy parallel switching capability. Applications include inductive cooking, inverterized microwave ovens, resonant converters, and other soft switching scenarios.
Product Attributes
- Brand: SPTECH
- Product Series: SPT25N135F1A
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| IGBT Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=1mA | 1350 | 1450 | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250A | 5.1 | 5.8 | 6.4 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=25A, Tj = 25C | - | 2.0 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=25A, Tj = 150C | - | 2.5 | 2.5 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 1350V, VGE = 0V, Tj = 25C | - | <1 | - | A |
| Zero Gate Voltage Collector Current | ICES | VCE = 1350V, VGE = 0V, Tj = 150C | - | 100 | 1000 | A |
| Gate-Emitter Leakage Current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Input Capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 2500 | - | pF |
| Output Capacitance | Coes | - | - | 70 | - | pF |
| Reverse Transfer Capacitance | Cres | - | - | 50 | - | pF |
| Gate Charge | QG | VCC = 600V, IC = 25A, VGE = 15V | - | 125 | - | nC |
| Switching Characteristics (Inductive Load, Rg=10, VCC=600V, IC=25A, VGE=15V) | ||||||
| Turn-off Delay Time (Tj=25C) | td(off) | Tj = 25C | - | 180 | - | ns |
| Fall Time (Tj=25C) | tf | Tj = 25C | - | 40 | - | ns |
| Turn-off Energy (Tj=25C) | Eoff | Tj = 25C | - | 0.32 | - | mJ |
| Turn-off Delay Time (Tj=150C) | td(off) | Tj = 150C | - | 220 | - | ns |
| Fall Time (Tj=150C) | tf | Tj = 150C | - | 90 | - | ns |
| Turn-off Energy (Tj=150C) | Eoff | Tj = 150C | - | 0.65 | - | mJ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VFM | IF = 25A | - | 2.3 | - | V |
| Reverse Recovery Time | Trr | IF= 25A, di/dt= 200A/s | - | 460 | - | ns |
| Reverse Recovery Current | Irr | - | - | 17 | - | A |
| Reverse Recovery Charge | Qrr | - | - | 3600 | - | nC |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | - | - | 1350 | - | V |
| DC Collector Current (TC=25C) | IC | TC = 25C | - | 50 | - | A |
| DC Collector Current (TC=100C) | IC | TC = 100C | - | 25 | - | A |
| Diode Forward Current (TC=25C) | IF | TC = 25C | - | 50 | - | A |
| Diode Forward Current (TC=100C) | IF | TC = 100C | - | 25 | - | A |
| Pulsed Collector Current | ICpuls | tp limited by Tjmax | - | 75 | - | A |
| Operating Junction Temperature | Tj | - | -40 | - | 150 | C |
| Storage Temperature | Ts | - | -55 | - | 150 | C |
| Thermal Resistance | ||||||
| IGBT Thermal Resistance (Junction-Case) | R(j-c) | - | - | 0.48 | - | K/W |
| Diode Thermal Resistance (Junction-Case) | R(j-c) | - | - | 1.2 | - | K/W |
| Thermal Resistance (Junction-Ambient) | R(j-a) | - | - | 40 | - | K/W |
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