Silicon PNP Medium Power Transistor UTC UP3855G-AA3-R Designed for Power Management and DC-DC Circuits

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Product Description

Product Overview

The UTC UP3855 is a PNP silicon transistor designed for medium power applications, featuring low saturation voltage. This characteristic leads to very low on-state losses, making it ideal for driving, power management functions, and DC-DC circuits.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: Silicon
Type: PNP Medium Power Low Saturation Transistor

Technical Specifications

Parameter	Symbol	SOT-223 (Note 1)	SOT-89 (Note 2)	UNIT
Power Dissipation	PD	3.0	0.6	W
Junction to Ambient Thermal Resistance	θJA	42	78	°C/W

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	UNIT
Collector-Base Breakdown Voltage	VCBO	IC=-100μA	-180		-200	V
Collector-Emitter Breakdown Voltage	VCEO	IC=-10mA (Note 1)	-140		-160	V
Emitter-Base Breakdown Voltage	VEBO	IE=-100μA		-7.0	-8.0	V
Collector Cut-Off Current	ICBO	VCB=-150V		<1	-20	nA
Collector Cut-Off Current	ICER	VCB=-150V, R≤1kΩ		<1	-20	nA
Emitter Cut-Off Current	IEBO	VEB=-6V		<1	-10	nA
Collector-Emitter Saturation Voltage	VCE(SAT)	IC=-0.1A, IB=-5mA		-40	-60	mV
		IC=-0.5A, IB=-50mA		-55	-80	mV
		IC=-1A, IB=-100mA		-85	-120	mV
		IC=-3A, IB=-300mA		-275	-360	mV
Base-Emitter Saturation Voltage	VBE(SAT)	IC=-3A, IB=-300mA(Note 1)		-940	-1040	mV
Base-Emitter Saturation Voltage	VBE(SAT)	IC=-3A, IB=-300mA		-940	-1040	mV
Static Forward Current Transfer Ratio	hFE	IC=-10mA, VCE=-5V	100	225
		IC=-1A, VCE=-5V	100	200	300
		IC=-3A, VCE=-5V	45
Transition Frequency	fT	IC=-100mA, VCE=-10V f=50MHz		120		MHz
Output Capacitance	COBO	VCB=-10V, f=1MHz		33		pF
Switching Times	tON	IC=-1A, VCC=-50V, IB1=-IB2=-100mA		150		ns
Switching Times	tOFF	IC=-1A, VCC=-50V, IB1=-IB2=-100mA		750		ns