Trench Field Stop IGBT SPTECH SPT75N65F1 650V 75A with excellent temperature stability and ruggedness
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Product Description
Product Overview
The SPT75N65F1 is a 650V, 75A Trench Field Stop IGBT designed for high-speed switching applications. It features high ruggedness, temperature stability, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-Emitter Breakdown Voltage | VCE | VGE=0V , IC=250uA | 650 | - | - | V |
| VCE | VGE=0V , IC=1mA | 650 | - | - | V | |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.6 | 5.6 | 6.2 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A, Tj = 25C | - | - | 1.7 | V |
| VCE(sat) | VGE=15V, IC=75A, Tj = 150C | - | - | 2.2 | V | |
| Zero Gate Voltage Collector Current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | - | 0.1 | - | A |
| ICES | VCE = 650V, VGE = 0V, Tj = 150C | - | 40 | 5000 | A | |
| Gate-emitter Leakage Current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75A | - | 40 | - | S |
| Input Capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 4500 | - | pF |
| Output Capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 200 | - | pF |
| Reverse Transfer Capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 100 | - | pF |
| Gate Charge | QG | VCC = 480V, IC = 75A, VGE = 15V | - | 260 | - | nC |
| Short Circuit Collector Current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | - | 350 | - | A |
| Turn-on Delay Time | td(on) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | - | 110 | - | ns |
| Rise Time | tr | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | - | 40 | - | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | - | 660 | - | ns |
| Fall Time | tf | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | - | 60 | - | ns |
| Turn-on Energy | Eon | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | - | 4.3 | - | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | - | 8.4 | - | mJ |
| Diode Forward Voltage | VFM | IF = 75A, Tj = 25C | - | 2.3 | - | V |
| Reverse Recovery Time | Trr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | - | 75 | - | ns |
| Reverse Recovery Current | Irr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | - | 16 | - | A |
| Reverse Recovery Charge | Qrr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | - | 664 | - | nC |
| IGBT thermal resistance, junction - case | R(j-c) | - | - | - | 0.3 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | - | 0.8 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | - | 40 | K/W |
| Power dissipation | Ptot | Tj=25C | - | - | 416 | W |
| Operating junction temperature | Tj | - | -40 | - | 150 | C |
| Storage temperature | Ts | - | -55 | - | 150 | C |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | - | - | - | 260 | C |
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Sellina