Battery Protection Using Slkor SL2333A P Channel Enhancement Mode Field Effect Transistor with Low RDS

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Product Description

Product Overview

The SL2333A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching capabilities and is suitable for applications such as battery protection, load switching, and power management.

Product Attributes

Brand: SLKORMicro (implied by URL)
Origin: China (implied by URL)
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings	VDS	TA=25			-12	V
	VGS	TA=25			8	V
	ID	TA=25			-6	A
	IDM	TA=25			-20	A
	PD	TA=25 Steady State			1.2	W
Thermal Resistance	RJA	Junction-to-Ambient @ Steady State		104		/ W
Temperature Range	TJ ,TSTG		-55		+150
Static Parameter	BVDSS	VGS= 0V, ID=-250A	-12			V
	IDSS	VDS=-12V,VGS=0V,TC=25		-1		A
	IGSS	VGS= 8V, VDS=0V			100	nA
	VGS(th)	VDS= VGS, ID=-250A	-0.4	-1.0		V
Static Drain-Source On-Resistance	RDS(ON)	VGS= -4.5V, ID=-5.4A		30	40	m
	RDS(ON)	VGS= -2.5V, ID=-4.0A		37	50	m
	RDS(ON)	VGS= -1.8V, ID=-1.0A		58	70	m
Diode Forward Voltage	VSD	IS=-4A,VGS=0V		-0.8	-1.2	V
Maximum Body-Diode Continuous Current	IS				-6	A
Capacitance	Ciss	VDS=-4V,VGS=0V,f=1MHZ		740		pF
	Coss	VDS=-4V,VGS=0V,f=1MHZ		290		pF
	Crss	VDS=-4V,VGS=0V,f=1MHZ		190		pF
Switching Parameters	Qg	VGS=-2.5V,VDS=-4V,ID=-4A		4.5		nC
	Qgs	VGS=-2.5V,VDS=-4V,ID=-4A		1.2		nC
	Qgd	VGS=-2.5V,VDS=-4V,ID=-4A		1.6		nC
Switching Times	tD(on)	VGEN=-8V,VDD=-4V, RL=1.2, ID=-3.3A		5		ns
	tr	VGEN=-8V,VDD=-4V, RL=1.2, ID=-3.3A		11		ns
	tD(off)	VGEN=-8V,VDD=-4V, RL=1.2, ID=-3.3A		22		ns
	tf	VGEN=-8V,VDD=-4V, RL=1.2, ID=-3.3A		16		ns