NPN epitaxial silicon transistor UTC 2SC5200L-R-B-T3L-T for in audio frequency amplifier output stages
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Product Description
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
The 2SC5200 is an NPN epitaxial silicon transistor from UNISONIC TECHNOLOGIES CO., LTD, specifically recommended for 100W high fidelity audio frequency amplifier output stages. It is complementary to the UTC 2SA1943.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Type: NPN Epitaxial Silicon Transistor
- Complementary to: UTC 2SA1943
Technical Specifications
| Ordering Number | Package | Pin Assignment | Lead Free | Halogen Free |
| 2SC5200L-x-T3P-T | TO-3P | B C E | Tube | |
| 2SC5200G-x-T3P-T | TO-3P | B C E | Tube | |
| 2SC5200L-x-T3B-T | TO-3PB | B C E | Tube | |
| 2SC5200G-x-T3B-T | TO-3PB | B C E | Tube | |
| 2SC5200L-x-T3L-T | TO-3PL | B C E | Tube | |
| 2SC5200G-x-T3L-T | TO-3PL | B C E | Tube |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 230 | V | |||
| Collector-Emitter Voltage | VCEO | 230 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 15 | A | |||
| Base Current | IB | 1.5 | A | |||
| Collector Power Dissipation | PC | (TC=25C) | 150 | W | ||
| Junction Temperature | TJ | +150 | C | |||
| Storage Temperature Range | TSTG | -55 | ~ | 150 | C | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 50mA, IB=0 | 230 | V | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 8A, IB= 0.8A | 0.4 | 3.0 | V | |
| Base -Emitter Voltage | VBE | VCE= 5V, IC= 7A | 1.0 | 1.5 | V | |
| Collector Cut-off Current | ICBO | VCB = 230V, IE=0 | 5.0 | A | ||
| Emitter Cut-off Current | IEBO | VEB= 5V, IC=0 | 5.0 | A | ||
| DC Current Gain | hFE1 | VCE= 5V, IC= 1A | 55 | 160 | ||
| DC Current Gain | hFE2 | VCE= 5V, IC= 7A | 35 | 60 | ||
| Transition Frequency | fT | VCE= 5V, IC= 1A | 30 | MHz | ||
| Collector Output Capacitance | COB | VCB= 10V, IE=0, f=1MHz | 200 | pF |
| RANK | Range |
| R | 55 ~ 110 |
| O | 80 ~ 160 |
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