NPN Epitaxial Silicon Transistor UTC 2SD1857L-Q-T92-B with 120V Breakdown Voltage and 80MHz Frequency
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Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SD1857 is an NPN epitaxial silicon transistor designed for power transistor applications. It features a high breakdown voltage of 120V, low collector output capacitance (typically 20pF at VCB=10V), and a high transition frequency of 80MHz, making it suitable for various electronic circuits requiring reliable power handling and signal amplification.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Product Line: UTC
- Material: Epitaxial Silicon
- Certifications: Lead Free, Halogen Free
- Origin: Taiwan (implied by website domain)
Technical Specifications
| Ordering Number | Package | Pin Assignment | Lead Free | Halogen Free | Marking |
| 2SD1857L-x-T60-K | TO-126 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857G-x-T60-K | TO-126 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857L-x-T6S-K | TO-126S | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857G-x-T6S-K | TO-126S | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857L-x-TM3-T | TO-251 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857G-x-TM3-T | TO-251 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857L-x-T92-B | TO-92 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857G-x-T92-B | TO-92 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857L-x-T92-K | TO-92 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857G-x-T92-K | TO-92 | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857L-x-T9N-B | TO-92NL | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857G-x-T9N-B | TO-92NL | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857L-x-T9N-K | TO-92NL | E C B | ✔ | 2SD1857 L/G | |
| 2SD1857G-x-T9N-K | TO-92NL | E C B | ✔ | 2SD1857 L/G |
| Parameter | Symbol | Ratings | Unit |
| Collector-Base Voltage | VCBO | 120 | V |
| Collector-Emitter Voltage | VCEO | 120 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Power Dissipation (TO-126/TO-126S) | PC | 1.4 | W |
| Collector Power Dissipation (TO-92) | PC | 0.625 | W |
| Collector Power Dissipation (TO-92 NL) | PC | 0.9 | W |
| Collector Power Dissipation (TO-251) | PC | 2 | W |
| Collector Current | IC | 2 | A |
| Collector Current (Peak) | ICP | 3 | A |
| Junction Temperature | TJ | +150 | C |
| Storage Temperature | TSTG | -40 ~ +150 | C |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | BVCBO | IC=50A | 120 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=1mA | 120 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | IE=50A | 5 | V | ||
| Collector Cut-Off Current | ICBO | VCB=100V | 1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=4V | 1 | A | ||
| DC Current Transfer Ratio | hFE | VCE=5V, IC=0.1A | 82 | 390 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=/IB=1A/0.1A (Note) | 0.4 | V | ||
| Transition Frequency | fT | VCE=5V, IE= -0.1A, f=30MHz. | 80 | MHz | ||
| Output Capacitance | COB | VCB=10V, IE=0A, f=1MHz (Note) | 20 | pF |
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