NPN transistor UTC 2N5551G-B-AB3-R designed for applications requiring high voltage and current gain

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Product Description

Unisonic Technologies 2N5551 NPN Silicon Transistor

The 2N5551 is a high voltage switching transistor designed for applications requiring high collector-emitter voltage and current gain. It is suitable for telephone switching circuits and amplifier applications.

Product Attributes

Brand: Unisonic Technologies Co., Ltd
Material: Silicon
Certifications: Lead Free, Halogen Free

Technical Specifications

Ordering Number	Package	Pin Assignment	Collector-Base Voltage (VCBO)	Collector-Emitter Voltage (VCEO)	Collector Current (IC)	Collector Dissipation (PC) SOT-89	Collector Dissipation (PC) TO-92	DC Current Gain (hFE2)	Current Gain Bandwidth Product (fT)	Output Capacitance (COB)
2N5551G-x-AB3-R	SOT-89	B C E	180 V	160 V	600 mA	500 mW	-	80-160	100-300 MHz	6.0 pF
2N5551G-x-T92-B	TO-92	E B C	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF
2N5551G-x-T92-K	TO-92	E B C	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF
2N5551G-x-T92-A-B	TO-92	E C B	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF
2N5551G-x-T92-A-K	TO-92	E C B	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF
2N5551L-x-T92-B	TO-92	E B C	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF
2N5551L-x-T92-K	TO-92	E B C	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF
2N5551L-x-T92-A-B	TO-92	E C B	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF
2N5551L-x-T92-A-K	TO-92	E C B	180 V	160 V	600 mA	-	625 mW	80-160	100-300 MHz	6.0 pF