Power Conversion Slkor SL2328A N Channel Enhancement Mode Field Effect Transistor with Trench Power MV MOSFET
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Product Description
Product Overview
The SL2328A is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. It offers excellent heat dissipation, a high-density cell design for low RDS(ON), and is MSL LEVEL 1 compliant. This MOSFET is designed for applications such as DC-DC converters and power management functions.
Product Attributes
- Brand: SLKormicro (implied by URL)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: MSL LEVEL 1
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current | IGSS2 | VGS= 10V, VDS=0V | 50 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.1 | 1.8 | 3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=2.0A | 240 | 310 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=2.0A | 250 | 350 | m | |
| Diode Forward Voltage | VSD | IS=2A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 2.0 | A | |||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 387 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHZ | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHZ | 28 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=2.0A | 9.56 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=50V,ID=2.0A | 1.81 | |||
| Gate-Drain Charge | Qgd | VGS=10V,VDS=50V,ID=2.0A | 1.97 | |||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=1 | 4 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=1 | 17.8 | |||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=1 | 13.2 | |||
| Turn-off fall Time | tf | VGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=1 | 28 | |||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current (TA=25) | ID | 2.0 | A | |||
| Drain Current (TA=70) | ID | 1.6 | A | |||
| Pulsed Drain Current | IDM | 8 | A | |||
| Total Power Dissipation (@ TA=25) | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 105 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina