VBsemi Elec AOD2210 VB Power MOSFET N Channel Trench type optimized for PWM and primary side switching

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Product Description

Product Overview

The AOD2210-VB is a high-performance N-Channel Trench Power MOSFET designed for primary side switching applications. It features a 175 C junction temperature rating, optimized for PWM applications, and is 100% Rg tested. This MOSFET offers a low on-resistance and is compliant with RoHS Directive 2002/95/EC.

Product Attributes

Brand: VBsemi
Certifications: RoHS Directive 2002/95/EC, Halogen-Free (JEDEC JS709A, IEC 61249-2-21)

Technical Specifications

Parameter	Symbol	Test Conditions	Typ.	Min.	Max.	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDS				200	V
Gate-Source Voltage	VGS				±20	V
Continuous Drain Current (TJ = 175 °C)	ID	TC = 25 °C			25	A
Continuous Drain Current (TJ = 175 °C)	ID	TC = 125 °C			16	A
Pulsed Drain Current	IDM				100	A
Continuous Source Current (Diode Conduction)	IS				28	A
Avalanche Current	IAS				3	A
Single Pulse Avalanche Energy	EAS	L = 0.1 mH			18	mJ
Maximum Power Dissipation	PD	TC = 25 °C			96	W
Operating Junction and Storage Temperature Range	TJ, Tstg			-55	175	°C
Thermal Resistance Ratings
Junction-to-Ambient	RthJA	t ≤ 10 s	15		18	°C/W
Junction-to-Ambient (Steady State)	RthJA		40		50	°C/W
Junction-to-Case (Drain)	RthJC		0.85		1.1	°C/W
Specifications
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 µA	200			V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 µA		2	4	V
Gate-Body Leakage	IGSS	VDS = 0 V, VGS = ±20 V			±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 200 V, VGS = 0 V	1			µA
Zero Gate Voltage Drain Current	IDSS	VDS = 200 V, VGS = 0 V, TJ = 125 °C			50	µA
Zero Gate Voltage Drain Current	IDSS	VDS = 200 V, VGS = 0 V, TJ = 175 °C			250	µA
On-State Drain Current	ID(on)	VDS = 5 V, VGS = 10 V			40	A
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V, ID = 3 A	0.055			“
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V, ID = 3 A, TJ = 25 °C			0.055	“
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V, ID = 3 A, TJ = 175 °C			0.070	“
Drain-Source On-State Resistance	RDS(on)	VGS = 6 V, ID = 3 A	0.092			“
Forward Transconductance	gfs	VDS = 15 V, ID = 3 A	35			S
Dynamic Characteristics
Input Capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1 MHz	1800			pF
Output Capacitance	Coss	VGS = 0 V, VDS = 25 V, f = 1 MHz			180	pF
Reverse Transfer Capacitance	Crss	VGS = 0 V, VDS = 25 V, f = 1 MHz			80	pF
Total Gate Charge	Qg	VDS = 100 V, VGS = 10 V, ID = 3 A	34		5	nC
Gate-Source Charge	Qgs	VDS = 100 V, VGS = 10 V, ID = 3 A		8		nC
Gate-Drain Charge	Qgd	VDS = 100 V, VGS = 10 V, ID = 3 A		12		nC
Gate Resistance	Rg		0.5		2.9	“
Turn-On Delay Time	td(on)	VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț	15			ns
Rise Time	tr	VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț	50		75	ns
Turn-Off Delay Time	td(off)	VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț	4		30	ns
Fall Time	tf	VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț	9		60	ns
Source-Drain Diode Ratings and Characteristics
Pulsed Current	IS				5	A
Diode Forward Voltage	VSD	IF = 3 A, VGS = 0 V	0.9		1.5	V
Source-Drain Reverse Recovery Time	trr	IF = 3 A, dI/dt = 100 A/µs	180		250	ns