High Side Load Switching P Channel MOSFET Slkor SL2101W Suitable for Portable Battery Powered Devices
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This P-Channel MOSFET features leading trench technology for low RDS(on), making it ideal for extending battery life in various applications. It is designed for high-side load switching, charging circuits, and single-cell battery applications found in devices like cell phones, digital cameras, and PDAs.
Product Attributes
- Brand: SLKORMicro
- Device Code: TS1
- Package: SOT-323
- Revision: Rev.1
- Date: 21 June 2017
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=-250A | -20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20VVGS=0V | -- | -- | -1 | uA |
| Gate-Body Leakage Current | IGSS | VGS=10VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=-250A | -0.4 | -0.62 | -1.0 | V |
| Diode Continuous Forward Current | IS | Tc=25C | -- | -- | -2 | A |
| Pulse Drain Current | IDM | Tc=25C | -- | -- | -5 | A |
| Tested Continuous Drain Current@GS=10V | ID | Tc=25C | -- | -- | -2 | A |
| Maximum Power Dissipation | PD | Tc=25C | -- | -- | 0.29 | W |
| Thermal Resistance Junction-to-Ambient | RJA | Mounted on Large Heat Sink | -- | 431 | -- | C/W |
| Static Electrical Characteristics @ TJ = 25C (unless otherwise noted) | ||||||
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5VID=-1.5A | -- | 75 | 100 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=-2.5VID=-1.5A | -- | 110 | 140 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=-1.8VID=-0.5A | -- | 150 | 300 | m |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Input Capacitance | CISS | VDS=-10VID=-2A VGS=-4.5V | -- | 327 | -- | pF |
| Output Capacitance | COSS | VDS=-10VID=-2A VGS=-4.5V | -- | 62 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=-10VID=-2A VGS=-4.5V | -- | 55 | -- | pF |
| Total Gate Charge | Qg | VDD=-10VID=-1A VGS=-4.5V | -- | 4 | -- | nC |
| Gate Source Charge | Qgs | VDD=-10VID=-1A VGS=-4.5V | -- | 0.7 | -- | nC |
| Gate Drain Charge | Qgd | VDD=-10VID=-1A VGS=-4.5V | -- | 0.8 | -- | nC |
| Turn-on Delay Time | td(on) | RG=2.5 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | RG=2.5 | -- | 30 | -- | nS |
| Turn-Off Delay Time | td(off) | RG=2.5 | -- | 45 | -- | nS |
| Turn-Off Fall Time | tf | RG=2.5 | -- | 46 | -- | nS |
| Forward on voltage | VSD | Tj=25Is=-1A | -- | -- | -1.2 | V |
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