Durable VBsemi Elec SQD40031EL GE3-VB P-Channel MOSFET meeting RoHS Directive 2002 95 EC standards

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Product Description

Product Overview

The SQD40031EL_GE3-VB is a P-Channel MOSFET designed for various electronic applications. It offers key features such as low on-state resistance and compliance with the RoHS Directive 2002/95/EC.

Product Attributes

Brand: VBsemi
Origin: Taiwan
Certifications: RoHS Directive 2002/95/EC compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static Characteristics
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 A	-	-	-30	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 A	-1	-	-3	V
Gate-Body Leakage	IGSS	VDS = 0 V, VGS = 20 V	-	-	100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = - 30 V, VGS = 0 V	-	-	-1	A
Zero Gate Voltage Drain Current	IDSS	VDS = - 30 V, VGS = 0 V, TJ = 125 C	-	-	-50	A
Zero Gate Voltage Drain Current	IDSS	VDS = - 30 V, VGS = 0 V, TJ = 175 C	-	-	-250	A
On-State Drain Current	ID(on)	VDS = -5 V, VGS = - 10 V	-	-120	-	A
Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V, ID = - 30 A	-	0.005	-
Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V, ID = - 30 A, TJ = 125 C	-	0.006	-
Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V, ID = - 30 A, TJ = 175 C	-	0.008	-
Drain-Source On-State Resistance	RDS(on)	VGS = - 4.5 V, ID = - 20 A	-	0.007	-
Forward Transconductance	gfs	VDS = - 15 V, ID = - 75 A	-	20	-	S
Dynamic Characteristics
Input Capacitance	Ciss	VGS = 0 V, VDS = - 25 V, f = 1 MHz	-	8000	-	pF
Output Capacitance	Coss	VGS = 0 V, VDS = - 25 V, f = 1 MHz	-	1565	-	pF
Reverse Transfer Capacitance	Crss	VGS = 0 V, VDS = - 25 V, f = 1 MHz	-	715	-	pF
Gate Charge Characteristics
Total Gate Charge	Qg	VDS = - 15 V, VGS = - 10 V, ID = - 75 A	-	160	240	nC
Gate-Source Charge	Qgs	VDS = - 15 V, VGS = - 10 V, ID = - 75 A	-	32	-	nC
Gate-Drain Charge	Qgd	VDS = - 15 V, VGS = - 10 V, ID = - 75 A	-	30	-	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5	-	25	40	ns
Rise Time	tr	VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5	-	225	360	ns
Turn-Off Delay Time	td(off)	VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5	-	150	240	ns
Fall Time	tf	VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5	-	210	340	ns
Source-Drain Diode Ratings and Characteristics
Continuous Current	IS		-	-	80	A
Pulsed Current	ISM		-	-	240	A
Forward Voltage	VSD	IF = - 75 A, VGS = 0 V	-	-1.2	-1.5	V
Reverse Recovery Time	trr	IF = - 75 A, dI/dt = 100 A/s	-	55	-	ns
Peak Reverse Recovery Current	IRM(REC)	IF = - 75 A, dI/dt = 100 A/s	-	2.5	5	A
Reverse Recovery Charge	Qrr	IF = - 75 A, dI/dt = 100 A/s	-	0.07	0.25	C
Absolute Maximum Ratings
Gate-Source Voltage	VGS		-	-	20	V
Continuous Drain Current (TJ = 175 C)	ID	TC = 25 C	-	-90	-	A
Continuous Drain Current (TJ = 175 C)	ID	TC = 125 C	-	-	-100	A
Pulsed Drain Current	IDM		-	-	-280	A
Avalanche Current	IAR		-	-	-80	A
Repetitive Avalanche Energy	EAR	L = 0.1 mH	-	180	-	mJ
Power Dissipation	PD	TC = 25 C (TO-220AB and TO-263)	-	187	-	W
Power Dissipation	PD	TA = 25 C (TO-263)	-	3.75	-	W
Operating Junction and Storage Temperature Range	TJ, Tstg		-55	-	175	C
Thermal Resistance Ratings
Junction-to-Ambient	RthJA	PCB Mount (TO-263)	-	40	-	C/W
Junction-to-Ambient	RthJA	Air (TO-220AB)	-	62.5	-	C/W
Junction-to-Case	RthJC		-	0.8	-	C/W