Low Gate Charge P Channel MOSFET Slkor FDN304P Ideal for Video Monitor and Power Management Systems

Name: Low Gate Charge P Channel MOSFET Slkor FDN304P Ideal for Video Monitor and Power Management Systems
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

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Product Description

Product Overview

The FDN304P is a P-Channel MOSFET featuring leading trench technology for low RDS(on) and low Gate Charge. It is designed for applications in video monitors and power management.

Product Attributes

Brand: slkormicro
Model: FDN304P
Marking: FDN304P

Technical Specifications

Parameter	Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings
VDS				-20	V
VGS				±8	V
TJ				150	°C
TSTG		-55		150	°C
IS	Tc=25°C			-2.4	A
IDM	Tc=25°C			-10	A
ID	Tc=25°C			-2.4	A
PD	Mounted on Large Heat Sink			0.5	W
RθJA			250		°C/W
Common Ratings
Gate-Source Voltage	(TC=25°C Unless Otherwise Noted)			±8	V
Drain-Source Breakdown Voltage	VGS=0VID=-250μA	-20			V
Maximum Junction Temperature				150	°C
Storage Temperature Range		-55		150	°C
Diode Continuous Forward Current	Tc=25°C			-2.4	A
Electrical Characteristics
IDSS	Zero Gate Voltage Drain Current VDS=-16VVGS=0V			-1	μA
IGSS	Gate-Body Leakage Current VGS=±8VVDS=0V			±100	nA
VGS(th)	Gate Threshold Voltage VDS=VGSID=-250μA	-0.4	-0.7	-1.5	V
RDS(on)	Drain-Source On-State Resistance VGS=-4.5VID=-2.4A		36	52	mΩ
RDS(on)	Drain-Source On-State Resistance VGS=-2.5VID=-2.0A		47	70	mΩ
RDS(on)	Drain-Source On-State Resistance VGS=-1.8VID=-1.8A		65	100	mΩ
CISS	Input Capacitance		605		pF
COSS	Output Capacitance		115		pF
CRSS	Reverse Transfer Capacitance		105		pF
Qg	Total Gate Charge		8.5		nC
Qgs	Gate Source Charge		1.5		nC
Qgd	Gate Drain Charge		2.6		nC
Switching Characteristics
td(on)	Turn-on Delay Time		5.5		nS
tr	Turn-on Rise Time		35		nS
td(off)	Turn-Off Delay Time		52		nS
tf	Turn-Off Fall Time		55		nS
Source- Drain Diode Characteristics
VSD	Forward on voltage Tj=25℃; Is=-2.4A			-1.2	V