Power Switching MOSFET N Channel 100 Volt VBsemi Elec IRL540NPBF VB Featuring Trench Power Technology

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Product Description

Product Overview

The IRL540NPBF-VB is a N-Channel 100-V (D-S) MOSFET featuring Trench Power MOSFET technology for low thermal resistance and high junction temperature capability. It is designed for various applications requiring efficient power switching.

Product Attributes

Brand: VBsemi
Certifications: RoHS Compliant, Halogen-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static Characteristics
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0 V, ID = 250 A	100			V
Gate-Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 A	1		3	V
Gate-Body Leakage	IGSS	VGS = 20 V, VDS = 0 V			100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 100 V, VGS = 0 V		1	A
Zero Gate Voltage Drain Current	IDSS	VDS = 80 V, VGS = 0 V, TJ = 125 C			50	A
Zero Gate Voltage Drain Current	IDSS	VDS = 80 V, VGS = 0 V, TJ = 175 C			250	A
On-State Drain Current	ID(on)	VDS 5 V, VGS = 10 V			75	A
Drain-Source On-State Resistance	rDS(on)	VGS = 10 V, ID = 5 A		0.036
Drain-Source On-State Resistance	rDS(on)	VGS = 4.5 V, ID = 3 A			0.038
Drain-Source On-State Resistance	rDS(on)	VGS = 10 V, ID = 5 A, TJ = 125 C		0.050
Drain-Source On-State Resistance	rDS(on)	VGS = 10 V, ID = 3 A, TJ = 175 C		0.065
Forward Transconductance	gfs	VDS = 15 V, ID = 15 A		10		S
Dynamic Characteristics
Input Capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1 MHz		450		pF
Output Capacitance	Coss	VGS = 0 V, VDS = 25 V, f = 1 MHz		270		pF
Reverse Transfer Capacitance	Crss	VGS = 0 V, VDS = 25 V, f = 1 MHz		90		pF
Total Gate Charge	Qg	VDS = 50 V, VGS = 10 V, ID = 40 A		35	60	nC
Gate-Source Charge	Qgs	VDS = 50 V, VGS = 10 V, ID = 40 A		11		nC
Gate-Drain Charge	Qgd	VDS = 50 V, VGS = 10 V, ID = 40 A		9		nC
Gate Resistance	RG			1.7
Turn-On Delay Time	td(on)	VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5		11	20	ns
Rise Time	tr	VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5		12	20	ns
Turn-Off Delay Time	td(off)	VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5		30	45	ns
Fall Time	tf	VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5		12	20	ns
Source-Drain Diode Ratings and Characteristics
Continuous Current	Is				40	A
Pulsed Current	ISM				120	A
Forward Voltage	VSD	IF = 30 A, VGS = 0 V		1.0	1.5	V
Reverse Recovery Time	trr	IF = 30 A, di/dt = 100 A/s		60		ns
Peak Reverse Recovery Current	IRM(REC)	IF = 30 A, di/dt = 100 A/s		5	8	A
Reverse Recovery Charge	Qrr	IF = 30 A, di/dt = 100 A/s		0.15	0.4	C
Absolute Maximum Ratings
Drain-Source Voltage	VDS				100	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID	TC = 25 C (TJ = 175 C)			55	A
Continuous Drain Current	ID	TC = 125 C (TJ = 175 C)			40	A
Pulsed Drain Current	IDM				135	A
Avalanche Current	IAR				35	A
Repetitive Avalanche Energy	EAR	L = 0.1 mH			61	mJ
Maximum Power Dissipation	PD	TC = 25 C			127	W
Maximum Power Dissipation	PD	TA = 25 C			3.75	W
Operating Junction and Storage Temperature Range	TJ, Tstg		-55		175	C
Thermal Resistance Ratings
Junction-to-Ambient	RthJA	(PCB Mount)			40	C/W
Junction-to-Case (Drain)	RthJC			1.4		C/W